2002
DOI: 10.1016/s0257-8972(02)00101-9
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Deposition of diamond-like carbon films using plasma based ion implantation with bipolar pulses

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Cited by 89 publications
(30 citation statements)
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“…Details of the system are described in a previous paper. [4] The deposition conditions of the DLC coatings are as follows; processing gas: toluene, positive and negative pulse voltages: +2.0 and −5.0 kV, pulse frequency: 4 kHz, pulse duration: 5 µs, deposition pressure: 0.03-2.0 Pa.…”
Section: Methodsmentioning
confidence: 99%
“…Details of the system are described in a previous paper. [4] The deposition conditions of the DLC coatings are as follows; processing gas: toluene, positive and negative pulse voltages: +2.0 and −5.0 kV, pulse frequency: 4 kHz, pulse duration: 5 µs, deposition pressure: 0.03-2.0 Pa.…”
Section: Methodsmentioning
confidence: 99%
“…Working pressure was kept 0.2 Pa. Deposition time was changed from 30 to 240 min. More details about the experimental setup have been described previously [5]. After the deposition, the compositional analysis of DLC films prepared on Si substrates was performed using a 1.7MV tandem-type ion accelerator [6].…”
Section: Methodsmentioning
confidence: 99%
“…In addition, the microstructure of the film is possible to control by ion bombardment caused by negative pulse bias voltage [3,4]. In this study, DLC films are prepared by a bipolar-type PBII method [5] and the mechanical properties related to the microstructure or structural changes are examined by wear test and Raman spectroscopy as a function of negative pulse voltages (V n ).…”
mentioning
confidence: 99%
“…1. Details of the system were described in a previous paper [4]. The deposition conditions of the Si-DLC coatings are as follows; processing gas: a mixture of tetramethylsilane (Si(CH 3 ) 4 ) and toluene, posi- Figure 1 Schematic diagram of bipolar-type PBII&D for the deposition of Si-DLC coatings.…”
Section: Methodsmentioning
confidence: 99%