Deposition of Ga2O3 thin films by liquid metal target sputtering

Zubkins, Mārtiņš; Vibornijs, Viktors; Strods, Edvards; Butanovs, Edgars; Bikse, Liga; Ottosson, Mikael; Hallén, Anders; Gabrusenoks, J.; Purans, J.; Azens, Andris

doi:10.1016/j.vacuum.2022.111789

Cited by 6 publications

(1 citation statement)

References 35 publications

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“…The investigations on the reactive sputtering of Ga targets are scarce, mainly due to the low melting point (T m = 30 • C) of gallium. Only one recent study could be found on the preparation of Ga 2 O 3 films using the reactive sputtering of liquid Ga [21].…”

Section: Introductionmentioning

confidence: 99%

Reactive Sputter Deposition of Ga2O3 Thin Films Using Liquid Ga Target

Gajdics,

Serényi,

Kolonits

et al. 2023

Coatings

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Ga2O3 is a promising material in the optoelectronics and semiconductor industry. In this work, gallium oxide thin films were deposited via radio frequency (RF) sputtering, using a liquid Ga target. The reactive sputtering was carried out using different oxygen flow rates and DC target potentials induced via the RF power. The thickness of the samples varied between 160 nm and 460 nm, depending on the preparation conditions. The composition and the refractive index of the layers were investigated via energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. It was found that, through the use of a lower DC target potential, a better film quality and higher oxygen content can be achieved. The reactive sputtering was modeled based on the Berg model, with the aim of determining the sputtering yields and the sticking coefficient. It was shown that an increase in DC target potential leads to the preferential sputtering of gallium.

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Section: Introductionmentioning

confidence: 99%