Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

Reep, D.H.; Ghandhi, S. K.

doi:10.1149/1.2119780

Cited by 299 publications

(66 citation statements)

References 5 publications

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“…4a-c. This is consistent with previous reports [13] and because the activation energy for two dimensional planar growth is known to decrease with increasing V/III ratio [14]. Consequently, the two dimensional, that is, radial, growth rate increases with V/III ratio, resulting in more tapered nanowires.…”

Section: Methodssupporting

confidence: 93%

Nanowires for optoelectronic device applications

Gao

Joyce

Paiman

et al. 2009

Phys. Status Solidi (c)

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GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect‐free GaAs nanowires via either two‐temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodssupporting

confidence: 93%

Nanowires for optoelectronic device applications

Gao

Joyce

Paiman

et al. 2009

Phys. Status Solidi (c)

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“…The activation energy, 58.86 kJ/mol found agreed with activation energy for the overall GaAs low-temperature MOCVD process (D. H. Reep, S. K. Ghandi, 1983). Borgstrom et al (2004) found in their observation of activation energy at higher growth temperature after limitation of nanowires growth rate, that Au on top of the nanowires does not effect the activation energy, but the process outside the droplet (M. Borgstrom, K. Depert, L. Samuelson, W. Seifert, 2004).…”

Section: Resultssupporting

confidence: 79%

Gallium Arsenide Nanowires Formed by Au-assisted Metal-organic Chemical Vapor Deposition: Effect of Growth Temperature

Muhammad¹,

Othaman²,

Wahab³

et al. 2009

MAS

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We have investigated the growth of gallium arsenide (GaAs) nanowires as a function of temperatures in metal organic chemical vapor deposition (MOCVD) to establish the mechanisms that govern wire growth and to optimize growth conditions. The growth follows the vapor-liquid-solid method by applying nanoparticle gold colloid as a catalyst to forms a eutectic liquid alloy with the substrate. The semi insulating undoped (111)B GaAs was first dipped in the poly-L-lysine solution before 30nm gold colloid dropped on the substrate surface. Growth process in the MOCVD system were done at temperatures between 380 and 600ºC with growth time set is 30 min. All the grown samples were analyzed using a field emmission scanning electron microscope (FE-SEM) and scanning electron microscopy (SEM). With increasing temperature the nanowire height increases but leads to significant tapering of the nanowire due to competing growth at the (111) substrate surface. At low temperatures nanowires grown are cylindrical-shaped with diameter wires between 50 and 100 nm.

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“…The equation used was where E a is the activation energy and R is the gas constant equal to 8.314472 JK -1 mol -1 (James F. Shackelford, 1996). The activation energy, 58.86 kJ/mol found agreed with activation energy for the overall GaAs low-temperature MOCVD process (D. H. Reep, S. K. Ghandi, 1983). Borgstrom et al (2004) found in their observation of activation energy at higher growth temperature after limitation of nanowires growth rate, that Au on top of the nanowires does not effect the activation energy, but the process outside the droplet (M. Borgstrom, K. Depert, L. Samuelson, W. Seifert, 2004).…”

Section: Resultssupporting

confidence: 77%