Deposition of Highly Crystalline Covellite Copper Sulphide Thin Films by SILAR

Ramírez-Esquivel, Obed Yamín; Mazón-Montijo, D.A.; Aguirre-Tostado, F. S.

doi:10.1002/pssa.201700500

Cited by 5 publications

(6 citation statements)

References 40 publications

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“…In the visible region, a relatively high transmission followed by an absorption edges can be observed, indicating typical semiconductor behavior. In addition, the fall down of transmitted light could be due to the forbidden band gap of CuS [25]. Figure 5 shows the optical transmittance spectrum of the CuS thin film measured at wavelengths ranging from 400 to 1200 nm.…”

Section: Cus Thin-film Compositional Propertiesmentioning

confidence: 99%

“…In the visible region, a relatively high transmission followed by an absorption edges can be observed, indicating typical semiconductor behavior. In addition, the fall down of transmitted light could be due to the forbidden band gap of CuS [25]. The band-gap energy (Eg) of the CuS thin film was calculated using the Tauc plot for absorption coefficient α obtained from the transmittance spectra, and the results are shown in Figure 6 [26].…”

Section: Cus Thin-film Compositional Propertiesmentioning

confidence: 99%

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Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

et al. 2020

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Copper sulfide (CuS) thin films were deposited on a glass substrate at room temperature using the radio-frequency (RF) magnetron-sputtering method at RF powers in the range of 40–100 W, and the structural and optical properties of the CuS thin film were investigated. The CuS thin films fabricated at varying deposition powers all exhibited hexagonal crystalline structures and preferred growth orientation of the (110) plane. Raman spectra revealed a primary sharp and intense peak at the 474 cm−1 frequency, and a relatively wide peak was found at 265 cm−1 frequency. In the CuS thin film deposited at an RF power of 40 W, relatively small dense particles with small void spacing formed a smooth thin-film surface. As the power increased, it was observed that grain size and grain-boundary spacing increased in order. The binding energy peaks of Cu 2p3/2 and Cu 2p1/2 were observed at 932.1 and 952.0 eV, respectively. Regardless of deposition power, the difference in the Cu2+ state binding energies for all the CuS thin films was equivalent at 19.9 eV. We observed the binding energy peaks of S 2p3/2 and S 2p1/2 corresponding to the S2− state at 162.2 and 163.2 eV, respectively. The transmittance and band-gap energy in the visible spectral range showed decreasing trends as deposition power increased. For the CuS/tin sulfide (SnS) absorber-layer-based solar cell (glass/Mo/absorber(CuS/SnS)/cadmium sulfide (CdS)/intrinsic zinc oxide (i-ZnO)/indium tin oxide (ITO)/aluminum (Al)) with a stacked structure of SnS thin films on top of the CuS layer deposited at 100 W RF power, an open-circuit voltage (Voc) of 115 mA, short circuit current density (Jsc) of 9.81 mA/cm2, fill factor (FF) of 35%, and highest power conversion efficiency (PCE) of 0.39% were recorded.

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Section: Cus Thin-film Compositional Propertiesmentioning

confidence: 99%

“…In the visible region, a relatively high transmission followed by an absorption edges can be observed, indicating typical semiconductor behavior. In addition, the fall down of transmitted light could be due to the forbidden band gap of CuS [25]. The band-gap energy (Eg) of the CuS thin film was calculated using the Tauc plot for absorption coefficient α obtained from the transmittance spectra, and the results are shown in Figure 6 [26].…”

Section: Cus Thin-film Compositional Propertiesmentioning

confidence: 99%

Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

et al. 2020

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“…The mass of P-1, P-2, P-3 and P-4 is estimated as 0.23, 0.41, 0.66 and 0.51 mg cm −2 respectively. It is observed that, the deposited mass increased from 20 to 30 cycles and gets decreased from 30 to 35 cycles due to the overgrowth and subsequent collapsing of the film [39][40][41][42]. Meticulous monitoring of (3) the film thickness is important because an increase in the film thickness increases mass loading on the substrate which reduces the stress to the substrate, results in peeling off the overgrown mass [42].…”

Section: Resultsmentioning

confidence: 99%

Capacitive property studies of inexpensive SILAR synthesized polyaniline thin films for supercapacitor application

et al. 2019

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The polyaniline (PANI) is an eco-friendly conductive polymer which has been considered for diverse applications. The partially oxidized phase of the PANI is useful for the charge storage application. Here, a unique nanograin/nanofiber structured PANI was grown on inexpensive stainless steel (SS) current collector by the simple oxidative polymerization process and its charge storage properties were systematically investigated. For that, the inexpensive successive ionic layer adsorption reaction method was used to grow a uniform nanostructured PANI on the SS conductor. This evolution of the nanostructure was studied with the Field emission scanning electron microscope. Furthermore, the as-prepared PANI was confirmed by the X-ray diffraction and the Fourier-transform infrared spectroscopy. In the half cell electrochemical testing, the prepared PANI exhibited a maximum specific capacitance of 710 F g −1 with a specific discharge capacity of 119 mAh −1 at 0.2 mA cm −2 in 1 M H 2 SO 4 for the supercapacitor application. Also, by using the power-law relation it was observed that, in a charging and a discharging current, initially a contribution of the diffusive faradaic reactions is more as compared with the surface capacitive non-faradaic reactions.

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“…The E g value for the ZnS sample is found to be 3.5 eV, corresponding to ZnS, 22,25 and with an increasing copper concentration in the cationic solution, the E g decreases up to 2.37 eV for the 1.67 mM Cu 2+ sample, the value explained by the direct energy band gap of CuS covellite. 21,22,28 Interestingly, we can observe that the 0.67 mM Cu 2+ sample slightly falls out of the trend that the other samples follow, and the sudden decrease in the E g may be due to a possible formation of a transition phase that forms between the ZnS and CuS covellite end points.…”

Section: Uv−vis−nir Transmittance and Reflectance Spectramentioning

confidence: 88%

“…Our proposal sheds light on a critical challenge—how to synthesize high-quality CuS thin films directly on glass substrates. Until now, achieving this objective has been notably difficult without resorting to the use of seed layers like CdS 21 or complex deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Cabrera-German,

Martínez-Gil,

Fuentes-Ríos

et al. 2023

ACS Omega

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Careful analysis of the chemical state of Cu x Zn 1– x S thin films remains an underdeveloped topic although it is key to a better understanding of the phase transformations and the linking between structural and optoelectronic properties needed for tuning the performance of Cu x Zn 1– x S-based next-generation energy devices. Here, we propose a chemical formulation and formation mechanism, providing insights into the successive ionic layer adsorption and reaction (SILAR) processing of Cu x Zn 1– x S, in which the copper concentration directly affects the behavior of the optoelectronic properties. Via chemical, optoelectronic, and structural characterization, including quantitative X-ray photoelectron spectroscopy, we determine that the Cu x Zn 1– x S thin films at low copper concentration are composed of ZnS, metastable Cu x Zn 1– x S, and CuS, where the evidence suggests that a depth compositional gradient exists, which contrasts with homogeneous films reported in the literature. The oxidation states for copper and sulfide species indicate that the films grow following a formation mechanism governed by ionic exchange and diffusion processes. At high copper concentrations, the Cu x Zn 1– x S thin films are covellite CuS that grew on a ZnS seed layer. Hence, this work reiterates that future research related to fine-tuning the application of this material requires a careful analysis of the depth-profile compositional and structural characteristics that can enable high conductivity and transparency.

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Deposition of Highly Crystalline Covellite Copper Sulphide Thin Films by SILAR

Cited by 5 publications

References 40 publications

Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

Capacitive property studies of inexpensive SILAR synthesized polyaniline thin films for supercapacitor application

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

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Deposition of Highly Crystalline Covellite Copper Sulphide Thin Films by SILAR

Cited by 5 publications

References 40 publications

Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

Effect of RF Power on the Properties of Sputtered-CuS Thin Films for Photovoltaic Applications

Capacitive property studies of inexpensive SILAR synthesized polyaniline thin films for supercapacitor application

Insights into the SILAR Processing of CuxZn1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

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Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment