Deposition of indium tin oxide thin films by cathodic arc ion plating

et al. 2010

J. Electrochem. Soc.

Thin-film transistors ͑TFTs͒ on glass substrates were fabricated using ZnO, grown by a metallorganic chemical vapor deposition ͑MOCVD͒ technique, with N-and Si-rich silicon nitrides as gate dielectrics. This is a report on MOCVD-grown ZnO TFTs that use silicon nitride as gate dielectrics. The ZnO TFTs using N-rich silicon nitride exhibited a field-effect mobility of 6.5 cm 2 /V s, a subthreshold slope of 0.8 V/decade, an on/off current ratio of 10 8 , and a threshold voltage of 2.05 V. The performance of these TFTs is better than that of TFTs employing Si-rich silicon nitride. This enhanced device performance can be attributed to a larger average grain size of 126 nm observed in the ZnO film grown on the N-rich silicon nitride compared to an average grain size of 69 nm for the ZnO film grown on Si-rich silicon nitride.

Section: Device Parametersmentioning

confidence: 95%

Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-Rich Silicon Nitride Gate Dielectric

Remashan¹,

et al. 2010

J. Electrochem. Soc.

“…Both films show one strong peak at 34.4 • corresponding to (0002) planes of ZnO and other peaks in the XRD spectrum are related to the ITO film. 54 The observation of mainly the (0002) peak for ZnO films indicates that the films are highly c-axis oriented. 55 The full width at half-maximum (fwhm) of the (0002) peak for the ZnO layer grown on the Nr-stoic SiN is 0.299 • , which is very close to that for the ZnO film grown on the N-rich SiN (0.300 • ).…”

Section: Resultsmentioning

confidence: 99%

Impact of Near-Stoichiometric Silicon Nitride Gate Insulator on the Performance of MOCVD-Grown ZnO Thin-Film Transistors

Remashan

ECS J. Solid State Sci. Technol.

et al. 2012

ZnO Thin-film transistors (TFTs) on glass substrates were fabricated using plasma-deposited silicon nitride (SiN) gate insulators having two different compositions, namely nitrogen-rich and near-stoichiometric. The ZnO films were grown by metal organic chemical vapor deposition. The TFTs using near-stoichiometric SiN gate insulator exhibit better performance compared to those using nitrogen-rich SiN, and the performance improvement can be attributed to hydrogenation of the ZnO channel region by the gate dielectric. The positive impact of near-stoichiometric SiN gate insulator on TFT performance is further demonstrated in two more different types of ZnO TFTs. The two different types of TFTs are TFTs using a bilayer gate dielectric stack and TFTs using a MgZnO layer at channel/gate dielectric interface. Both types of TFTs exhibited excellent device characteristics.

“…Both the films show one strong peak at 34.5°c orresponding to ͑0002͒ planes of ZnO, and the other peaks in the XRD spectrum are due to the ITO film. 27 This indicates that the films are highly c-axis oriented. 28 However, the intensity of the ͑0002͒ diffraction peak of ZnO films grown on the SiO 2 /Si 3 N 4 layer is higher than that on the Si 3 N 4 layer by a factor of about 2.…”

Section: Characteristics Of Zno Tfts With Si 3 N 4 Gate Dielectric-mentioning

confidence: 94%

High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO[sub 2]∕Si[sub 3]N[sub 4] Bilayer Gate Dielectric

Remashan¹,

et al. 2010

J. Electrochem. Soc.

Bottom-gated thin-film transistors ͑TFTs͒ on glass substrates were fabricated using ZnO channel layer grown by metal organic chemical vapor deposition with two different gate dielectrics. The gate dielectrics employed were plasma enhanced chemical vapor deposition prepared Si 3 N 4 and SiO 2 /Si 3 N 4 bilayer stack. The TFTs employing SiO 2 /Si 3 N 4 bilayer gate dielectric exhibit a fieldeffect mobility of 17.5 cm 2 /V s and an on/off current ratio of 3 ϫ 10 7 . The TFTs using only Si 3 N 4 gate dielectric, on the other hand, show a lower field-effect mobility of 4.9 cm 2 /V s and a lower on/off current ratio of 2 ϫ 10 7 . The enhancement of device properties is attributed to a better c-axis crystal orientation, a larger grain size, and a lower density of point defects in ZnO films grown on the SiO 2 /Si 3 N 4 bilayer stack.