Deposition of (Ni80Fe20)100–&lt;italic&gt;x&lt;/italic&gt;Cr&lt;italic&gt;x&lt;/italic&gt; Alloy Thin Films for Potential Applications in Magnetic Recording Media

Diken, S.; Ozkaya, Omer; Cakmaktepe, S

doi:10.1109/tmag.2016.2598527

Cited by 5 publications

(3 citation statements)

References 16 publications

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“…The decrease in H k with increasing Cr content is a result of the increasing amount of disorder of the film, particularly the breaking up of the directional pair ordering of the alloy's Ni and Fe atoms. Other studies have reported an increase in anisotropy at Cr contents over 40% and attributed it to enhanced exchange bias [29]. This study did not investigate alloys with high enough Cr content to see this effect.…”

Section: Magnetic Propertiesmentioning

confidence: 78%

Magnetic properties of chromium-doped Ni80Fe20 thin films

Devonport

Vishina

Singh

et al. 2018

Journal of Magnetism and Magnetic Materials

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a b s t r a c tThis paper investigates the properties of thin films of chromium-doped Ni 80 Fe 20 (Permalloy) that could potentially be useful in future low-power magnetic memory technologies. The addition of chromium reduces the saturation magnetization, M s , which is useful for low-energy switching, but does not significantly degrade the excellent switching properties of the host material even down to 10 K, the lowest temperature measured, in films as thin as 2.5 nm. As an example, an alloy film composed of 15% chromium and 85% Ni 80 Fe 20 has an M s just over half that of pure Ni 80 Fe 20 , with a coercivity H c less than 4 Oe, an anisotropy field H k less than 1 Oe, and an easy-axis remanent squareness M r /M s of 0.9 (where M r is the remanent magnetization). Magnetodynamical measurements using a pulsed inductive microwave magnetometer showed that the average Landau Lifshitz damping k was relatively constant with changing Cr content, but increased significantly for thinner films (k %150 MHz for 11 nm, k %250 MHz for 2.5 nm), and at low bias fields likely due to increased magnetic dispersion. Density functional theory calculations show that chromium reduces M s by entering the lattice antiferromagnetically; it also increases scattering in the majority spin channel, while adding almost insignificant scattering to the minority channel.

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Section: Magnetic Propertiesmentioning

confidence: 78%

Magnetic properties of chromium-doped Ni80Fe20 thin films

Devonport

Vishina

Singh

et al. 2018

Journal of Magnetism and Magnetic Materials

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“…For this alloy, saturation magnetization was 13% higher and coercivity was 4.5 times lower than the values for Co 90 Fe 10 commonly used in SVs [ 21 ]. The buffer layer Ta/[Ni 80 Fe 20 ] 60 Cr 40 promoted the formation of the <111> texture [ 22 , 23 ] and a decrease in crystallite size, as well as the interlayer roughness of the nanostructured film [ 24 , 25 ].…”

Section: Methodsmentioning

confidence: 99%

A Spin Valve-Based Rhombus-Shaped Micro-Object Implementing a Full Wheatstone Bridge

Milyaev,

Naumova,

Germizina

et al. 2024

Sensors

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Spin valves with a synthetic antiferromagnet were fabricated via magnetron sputtering. It was shown that the fabricated spin valve layers had a perfect microstructure and smooth interfaces, and therefore, an RKKY interaction dominated in the coupling of the ferromagnetic layers separated by a copper spacer. Rhombus-shaped micro-objects were fabricated from a single spin valve film. The thermomagnetic treatment procedure was found to form unidirectional anisotropy in the micro-object such that the values of the exchange bias fields in the rhombus’ nonparallel sides were opposite in sign. For the CoFeNi/Ru/CoFeNi synthetic antiferromagnet, we determined the differences between the ferromagnetic layer thicknesses at which the thermomagnetic treatment formed the same exchange bias all over each rhombus’ side. We also fabricated a sensor element in which each side of the rhombus was the shoulder of a Wheatstone bridge. After the thermomagnetic treatment procedure, each shoulder worked as an active magnetosensitive element, enabling the device to operate as a full Wheatstone bridge. The sensor output exhibited a step shape, high sensitivity to field changes, and significant magnetic hysteresis. Such characteristics are suitable for switching devices.

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“…Different types of seed layers have been explored in earlier studies, such as Ta, NiFe, Ru, NiCr, and NiFeCr [10][11][12][13][14][15][16][17]. Among them, NiFeCr attracts a great deal of attention.…”

Section: Introductionmentioning

confidence: 99%

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

et al. 2022

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The effect of the seed layers on the magnetic properties of the giant magnetoresistance thin films has received a lot of attention. Here, a synthetic spin valve film stack with a wedge-shaped NiFeCr seed layer is deposited and annealed following a zero-field cooling procedure. The film crystallinity and magnetic properties are studied as a function of the NiFeCr seed layer thickness. It is found that the exchange coupling field from the IrMn/CoFe interface and the antiferromagnetic coupling field in the synthetic antiferromagnet both increase as the seed layer thickness increases, indicating the perfection of film texture. In this film, the critical thickness of the NiFeCr seed layer for the formation of the ordered IrMn3 texture is about 9.3 nm. Meanwhile, a reversal of the pinning direction in the film is observed at this critical thickness of NiFeCr. This phenomenon can be explained in a free energy model by the competition effect between the exchange coupling and the interlayer coupling during the annealing process.

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Deposition of (Ni₈₀Fe₂₀)_{100–<italic>x</italic>}Cr_{<italic>x</italic>} Alloy Thin Films for Potential Applications in Magnetic Recording Media

Cited by 5 publications

References 16 publications

Magnetic properties of chromium-doped Ni80Fe20 thin films

Magnetic properties of chromium-doped Ni80Fe20 thin films

A Spin Valve-Based Rhombus-Shaped Micro-Object Implementing a Full Wheatstone Bridge

Reversal of the Pinning Direction in the Synthetic Spin Valve with a NiFeCr Seed Layer

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