Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO<sub>2</sub>(100) substrates

Yang, Weijia; Wang, Wenliang; Lin, Yunhao; Liu, Zuolian; Zhou, Shunhua; Qian, Huirong; Gao, Fangliang; Zhang, Shuguang; Li, Guoqiang

doi:10.1039/c3tc31935k

Cited by 48 publications

(51 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Meanwhile, sapphire has a low thermal conductivity of $ 25 W/m K that hinders the thermal dispatch during the device application and hence the development of high-power group III-nitride devices. What's more, group III-nitride devices prepared on sapphire are mainly along the [0001] c-axis, where strong spontaneous and strained-induced piezoelectric polarization exist [7][8][9][10]. The internal electric field caused by this polarization leads to the separation of carriers in the quantum wells (so called quantum-confined Stark effect, QCSE) and thereby a reduced quantum efficiency and a quicker efficiency droop [7][8][9][10].…”

Section: Introductionmentioning

confidence: 98%

“…At present, sapphire is still the most popular commercial substrate for epitaxial growth of group III-nitride devices. However, due to the relatively large lattice mismatch between sapphire and group III-nitrides, high-density dislocations still exist in the group III-nitride devices, which may serve as nonradiative recombination centers, and eventually deteriorate the performance of group III-nitride devices [8][9][10]. Meanwhile, sapphire has a low thermal conductivity of $ 25 W/m K that hinders the thermal dispatch during the device application and hence the development of high-power group III-nitride devices.…”

Section: Introductionmentioning

confidence: 99%

“…The internal electric field caused by this polarization leads to the separation of carriers in the quantum wells (so called quantum-confined Stark effect, QCSE) and thereby a reduced quantum efficiency and a quicker efficiency droop [7][8][9][10]. One of the most effective approaches to build group III-nitride devices is based on nonpolar planes including (11 À 20) a-and (1 À 100) m-planes [7][8][9][10], because the QCSE is eliminated in the nonpolar group III-nitride devices and accordingly the efficiency is improved. In addition, the price for sapphire is still quite expensive, which raises the cost for the commercialization of group III-nitride devices.…”

Section: Introductionmentioning

confidence: 99%

“…What's more, group III-nitride devices prepared on sapphire are mainly along the [0001] c-axis, where strong spontaneous and strained-induced piezoelectric polarization exist [7][8][9][10]. The internal electric field caused by this polarization leads to the separation of carriers in the quantum wells (so called quantum-confined Stark effect, QCSE) and thereby a reduced quantum efficiency and a quicker efficiency droop [7][8][9][10]. One of the most effective approaches to build group III-nitride devices is based on nonpolar planes including (11 À 20) a-and (1 À 100) m-planes [7][8][9][10], because the QCSE is eliminated in the nonpolar group III-nitride devices and accordingly the efficiency is improved.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, group III-nitrides such as AlN [1,2], GaN [3][4][5], and InN [6], as well as their alloys have attracted remarkable considerations due to their inherent properties [7][8][9], which make them possible for applications in optoelectronic devices [10]. At present, sapphire is still the most popular commercial substrate for epitaxial growth of group III-nitride devices.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

Self Cite

130

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

Self Cite

130

View full text Add to dashboard Cite

A Review on the Tribological Performances of High‐Entropy Alloys

Chen

Zhu

2022

Adv Eng Mater

View full text Add to dashboard Cite

Wear is an important form of material loss and failure, and it is usually inevitable in almost all mechanical systems with moving parts. The durability and reliability of engineering components are closely related to their wear resistance. Developing advanced materials to alleviate energy and materials losses in moving mechanical systems still remains a great challenge nowadays. The emergence of novel high‐entropy alloys (HEAs) that compose of multiple principal elements holds great promise for the development of materials with extraordinary wear resistance, due to their high hardness, high wear resistance, and excellent corrosion resistance. Herein, the current research progress of the tribology of HEAs under different conditions is reviewed, including high temperature, dry condition, corrosion solution, and oil lubrication. Specifically, the effects of compositions, microstructures, lubricants, and protective oxide layers on the tribological performance of HEAs are summarized. Furthermore, the underlying mechanisms that are responsible for the excellent wear resistance of HEAs under different conditions are discussed. Finally, the current challenges and the future outlooks are emphasized and addressed systematically. In view of the excellent tribological performances and the diversity of compositional design, HEAs have great potential to be applied in a wide range of mechanical systems to minimize wear.

show abstract

Mechanism of Fast Storage of Li/Na in Complex Sb‐Based Hybrid System

Xiang,

Hu,

Zhong

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Antimony（Sb） has high theoretical specific capacity and moderate reaction potential, but poor cycling stability and rate performance caused by large volume expansion and sluggish reaction kinetics limit its development in alkali‐ion batteries. The construction of carbon/Sb composites can solve this problem, but the traditional single carbon composite and poor Sb/carbon interface have limited promotion. Here, under the guidance of theoretical calculations, a strategy of hierarchical double carbon composite is proposed to enhance the performance of Sb anode, and systematically reveal the lithium/sodium ions (Li+/Na+) storage mechanism of Sb in complex composite system. Sb nanoparticles (Sb NPs) are encapsulated in carbon sphere matrix with strong interfacial chemical bond to form the first level composite material, and then the highly conductive and mechanically strong graphene is used as a three‐dimensional skeleton network to connect the first level composite to form the second level composite material. The hierarchical double carbon/Sb composite exhibits excellent rate (228 mAh g−1 @ 20 A g−1) and long cycling performance (373.7 mAh g−1 @ 2 A g−1 after 2200 cycles, capacity retention of 93.1%). This work may expand structural design and interface regulation of Sb/C composites and providing theoretical guidance for metal anodes development.

show abstract

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO₂(100) substrates

Cited by 48 publications

References 44 publications

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

A Review on the Tribological Performances of High‐Entropy Alloys

Mechanism of Fast Storage of Li/Na in Complex Sb‐Based Hybrid System

Contact Info

Product

Resources

About

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO2(100) substrates

Cited by 48 publications

References 44 publications

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

A Review on the Tribological Performances of High‐Entropy Alloys

Mechanism of Fast Storage of Li/Na in Complex Sb‐Based Hybrid System

Contact Info

Product

Resources

About

Deposition of nonpolar m-plane InGaN/GaN multiple quantum wells on LiGaO₂(100) substrates