2009
DOI: 10.1002/aoc.1494
|View full text |Cite
|
Sign up to set email alerts
|

Deposition of osmium and ruthenium thin films from organometallic cluster precursors

Abstract: Single-source organometallic precursors based on a number of homometallic clusters as well as heterometallic cluster RuOs 3 (CO) 13 (µ-H) 2 have been used for the chemical vapor deposition of osmium films and osmium-ruthenium alloy films, respectively.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2011
2011
2023
2023

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 8 publications
(4 citation statements)
references
References 12 publications
0
4
0
Order By: Relevance
“…This eventually might lead to good wetting characteristics of the Os film. A systematic review of existing literature, including reports on growth of thin osmium films by using differential potential pulse deposition method 51 , atomic layer deposition 52 , chemical vapor deposition 53,54,55 , and magnetron sputtering 56 , has highlighted a potential pathway for the synthesis of true 2D Os layers. Particularly, a more beneficial combination of the molecular precursors for ALD/CVD growth and supporting substrates could facilitate a template-assisted 2D growth regime of osmium.…”
Section: Osmiummentioning
confidence: 99%
“…This eventually might lead to good wetting characteristics of the Os film. A systematic review of existing literature, including reports on growth of thin osmium films by using differential potential pulse deposition method 51 , atomic layer deposition 52 , chemical vapor deposition 53,54,55 , and magnetron sputtering 56 , has highlighted a potential pathway for the synthesis of true 2D Os layers. Particularly, a more beneficial combination of the molecular precursors for ALD/CVD growth and supporting substrates could facilitate a template-assisted 2D growth regime of osmium.…”
Section: Osmiummentioning
confidence: 99%
“…Li et al 157 also explored a single source precursor heteronuclear carbonyl cluster [RuOs 3 (CO) 13 (m-H )2 ] 62 for the preparation of thin lms of Os-Ru binary alloy. The ratio of osmium to ruthenium varied with the deposition temperature, and at higher temperatures (400-500 C) the deposited surface was smoother.…”
Section: (D) Miscellaneous Ruthenium Cvd Precursorsmentioning
confidence: 99%
“…Decomposition of organometallic complexes in milder conditions provides a route for preparation of nanoparticles (NPs) with controllable size without using organic salts, oxides and halides . Wide range of metal and metal oxide NPs such as Ru, Au, Rh, Pt, Fe, Ni, Pd, Cu, Co, ZnO, bimetallic NPs such as PtMn, PtCo, FePd, PdCu, PtRu, PtAu and thin films such as (Fe 1‐x Co x ) 3 P, Fe 3 (P 1‐x Te x ), ZnS, In 2 S 3, Os and Ru were prepared by using of organometallic complexes. Decomposition, pyrolysis and chemical vapor deposition of organometallic precursors have been known as general pathways for production of NPs with clean procedures in mild conditions.…”
Section: Introductionmentioning
confidence: 99%