Deposition of Thin Si, Ge, and SiGe Films by Ballistic Hot Electron Reduction

Abstract

Liquid-phase deposition scheme of thin group-IV films is presented under ballistic hot electron injection into solutions. Energetic electrons emitted from nanocrystalline Si diode reduce target ions at the interface followed by the deposition of thin amorphous Si, Ge, and SiGe films with no contaminations.