Deposition of topological insulator Sb2Te3 films by an MOCVD process

Abstract

films were grown by a MOCVD process on Al 2 O 3 (0001) substrates at 400 C by use of i-Pr 3 Sb and Et 2 Te 2 and characterized by SEM, AFM, XRD, EDX and Auger spectroscopy. The electrical sheet resistivity was measured in the range of 4 to 400 K, showing a monotonic increase with increasing temperature. The valence band structure probed by angle-resolved photoemission shows the detailed dispersions of the bulk valence band and the topological surface state of a quality no less than for optimized bulk single crystals. The surface state dispersion gives a Dirac point roughly 30 meV above the Fermi level leading to hole doping and the presence of bulk valence states at the Fermi energy.

Optoelectronic characteristics of a near infrared light photodetector based on a topological insulator Sb2Te3film

“…For the present NIR photodetector, when it is irradiated by 980 nm illumination, the resultant photocurrent mainly consists of two parts: (1) The first contributory factor is associated with the photoconductivity effect of the bulk. Due to the relatively small bandgap of the bulk (～0.26 eV), 6 …”

Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films

“…High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) of the pyrochlore film was performed using an FEI probe-corrected Titan3 80–300 S/TEM at 300 kV with a detector collection range of 55–375 mrad. Figure 2(a) shows a low magnification HAADF-STEM image of a cross-section of the annealed film.…”

“…Given such strong SOC, exotic phases of matter are predicted to occur, including the topological insulator, Weyl semimetal, and chiral spin liquid1234. Such materials have potential applications in quantum computing and spintronics5.…”

Covalently bonded compounds of heavy group 15/16 elements – Synthesis, structure and potential application in material sciences

“…[185,186,187,188,189,190] In contrast, only a very few reports on the use of suitable single-source precursors for the deposition of Sb 2 Te 3 films. In the following, the most prominent type of compounds for use in gas-phase based thin film generation will by summarized.…”