“…Among these, indium oxide (In 2 O 3 ) is an n-type degenerate semiconducting oxide which is finds optoelectronic applications such as flat panel displays, solar cells, photodiodes [1][2][3], etc. For the past three decades many researchers have reported on the physical properties of In 2 O 3 films formed by different deposition methods such as flash evaporation [4], electron beam evaporation [5], dc/rf magnetron sputtering [6][7][8], laser deposition [9], molecular beam epitaxy [10], chemical vapor deposition [11,12], sol-gel process [13], spray pyrolysis [14,15], electrochemical deposition [16] were employed for preparing indium oxide films to meet present day science and technological requirements. But less work has been reported on the influence of oxygen partial pressure (pO 2 ) which affects the physical properties of In 2 O 3 films prepared by activated reactive evaporation method.…”