2008
DOI: 10.1016/j.surfcoat.2008.06.053
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Deposition of transparent conductive indium oxide by atmospheric-pressure plasma jet

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Cited by 21 publications
(11 citation statements)
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“…Among these, indium oxide (In 2 O 3 ) is an n-type degenerate semiconducting oxide which is finds optoelectronic applications such as flat panel displays, solar cells, photodiodes [1][2][3], etc. For the past three decades many researchers have reported on the physical properties of In 2 O 3 films formed by different deposition methods such as flash evaporation [4], electron beam evaporation [5], dc/rf magnetron sputtering [6][7][8], laser deposition [9], molecular beam epitaxy [10], chemical vapor deposition [11,12], sol-gel process [13], spray pyrolysis [14,15], electrochemical deposition [16] were employed for preparing indium oxide films to meet present day science and technological requirements. But less work has been reported on the influence of oxygen partial pressure (pO 2 ) which affects the physical properties of In 2 O 3 films prepared by activated reactive evaporation method.…”
Section: Introductionmentioning
confidence: 99%
“…Among these, indium oxide (In 2 O 3 ) is an n-type degenerate semiconducting oxide which is finds optoelectronic applications such as flat panel displays, solar cells, photodiodes [1][2][3], etc. For the past three decades many researchers have reported on the physical properties of In 2 O 3 films formed by different deposition methods such as flash evaporation [4], electron beam evaporation [5], dc/rf magnetron sputtering [6][7][8], laser deposition [9], molecular beam epitaxy [10], chemical vapor deposition [11,12], sol-gel process [13], spray pyrolysis [14,15], electrochemical deposition [16] were employed for preparing indium oxide films to meet present day science and technological requirements. But less work has been reported on the influence of oxygen partial pressure (pO 2 ) which affects the physical properties of In 2 O 3 films prepared by activated reactive evaporation method.…”
Section: Introductionmentioning
confidence: 99%
“…Key distances which control the coating properties are “ d ” (nozzle‐to‐substrate) and “ δ ” (injector‐to‐nozzle, being either positive, the injector is located between the substrate and the nozzle, or negative, the injector is located before the nozzle). (f) The Atomflow RF‐plasma reactor by Surfx Technologies . (g) Generation of nanoparticles with hybrid plasma‐liquid reactors .…”
Section: Atmospheric Pressure Plasma Technologiesmentioning
confidence: 99%
“…The deposition approaches can be divided into two main groups. First, localized treatment can be achieved by APP jets or plasma torches, where the deposition usually results in an axially symmetric bell‐shaped or ring‐shaped profile on a few mm 2 or cm 2 , see Figure b, d, and e. The deposition area can be increased by using gas showers with deposition area of few cm 2 as it is done in a commercial reactor (Atomflo, see Figure f) . Homogeneous film growth over larger area can be achieved by using linear plasma jet arrays with overlapping treatment areas (see Figure ), combined with movement of the substrate, or by movement of the plasma reactor in a two‐dimensional pattern over the treated surface.…”
Section: Atmospheric Pressure Plasma Technologiesmentioning
confidence: 99%
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“…Atmospheric pressure plasma has attracted considerable attention due to the potential applications for pretreatments of plastic painting, semiconductor packaging, liquid crystal display (LCD) wet cleaning, in green-and bio-technology [1][2][3]. The electrode structure of the atmospheric pressure plasma, such as a remote dielectric barrier discharge (DBD), a direct DBD, and an arc jet [4], varies depending on the application.…”
Section: Introductionmentioning
confidence: 99%