Deposition of wurtzite type boron nitride layers by reactive pulse plasma crystallization

Synthetic routes to boron nitride

“…Constant and Feurer115 have used hexachloroborazene (C1,B3N3C1,) alone as a CVD source for forming amorphous BN coatings at 900 "C. More recently, Schleich and co-workers116 reported BN depositions employing MOCVD precursors, (C2-H5),N-BH3 and (C2H5)2N(H).BH3. The advantage of using these well-known adducts is that they permit use of the readily cleaved B-H bonds without the need for handling hazardous diborane (6). Related MOCVD precursors are, of course, routinely used to produce NH3/H2 are probably the most widely i other III-V materials.…”

Carbide, Nitride and Boride Materials Synthesis and Processing

“…The first experimental work on PECVD of cBN was performed using a reactive pulsed plasma (Sokolowski, 1979). Whereas CVD films are analogous to highly oriented pyrolytic graphite, PECVD produces cBN films analogous to the diamond structure.…”

Anisotropy of surface optical properties at BN(110): Anab initiostudy

“…2 Moreover, the possibility to grow BN nanotubes has stimulated a large interest upon the layered hexagonal phase (h-BN) too. 9 It is now generally agreed experimentally that bulk c-BN is the thermodynamically stable phase at ambient conditions, and that the less dense h-BN becomes stable at temperatures exceding Tϳ1200 K. 10 Since 1979 c-BN chemical vapor deposited films have been realized, 11 but the production of pure c-BN thin films ͑either by chemical or physical vapor deposition͒ remains a difficult task due to the formation, during the growth process, of unwilled h-BN domains. 12 A general consensus gained from the experimental excitation energies is that the minimum band gap is direct in the case of h-BN, and indirect in the case of c-BN.…”