Deposition of YBa2Cu3O7−x films on Si with conductive indium oxide as a buffer layer

Indium oxide thin films were grown onto Si and quartz substrates by d.c. reactive sputtering of elemental indium. X-ray diffraction and transmission electron microscopy studies confirmed the single-phase and polycrystalline nature of the films. Secondary ion mass spectrometry investigations of In 2 O 3 /Si structures showed the formation of an inhomogeneous interface region ∼20 nm thick between In 2 O 3 and Si. The overall feature of the interface remained the same under annealing in an oxygen atmosphere, but annealing in an argon atmosphere drastically altered the nature of the interface. The observations indicate that interface formation and stability depend critically on the availability of oxygen.

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Growth and SIMS study of d.c.‐sputtered indium oxide films on silicon

Malar

Mohanty

Balamurugan

et al. 2005

Surface & Interface Analysis

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On-axis single-target sputter deposition of YBCO on Si and YSZ

Hung

Scyoc

Schlesingera

et al. 1995

Materials Science and Engineering: B

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Growth and ion beam study of DC sputtered indium oxide films

Malar¹,

Vijayan²,

Tyagi³

et al. 2005

Nuclear Instruments and Methods in Physics Research Section B:

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Deposition of YBa2Cu3O7−x films on Si with conductive indium oxide as a buffer layer

Cited by 4 publications

References 6 publications

Growth and SIMS study of d.c.‐sputtered indium oxide films on silicon

Growth and SIMS study of d.c.‐sputtered indium oxide films on silicon

On-axis single-target sputter deposition of YBCO on Si and YSZ

Growth and ion beam study of DC sputtered indium oxide films

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