Deposition temperature determination of HDPCVD silicon dioxide films

Gulleri, Gianluca; Carpanese, C.; Cascarano, C.; Lodi, D; Ninni, R.; Ottaviani, G.

doi:10.1016/j.mee.2005.07.079

Microelectronic Engineering

2005

DOI: 10.1016/j.mee.2005.07.079

|View full text |Cite

Deposition temperature determination of HDPCVD silicon dioxide films

Gianluca Gulleri

C. Carpanese

C. Cascarano

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2009

2024

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of refractive index as a measure of film quality was confirmed by measurements of film etch rate. Etch rate is a convenient and accurate method commonly used to characterize SiO 2 film quality, being well correlated with important parameters such as breakdown field, density, and impurity content. , Etch rate measurements were performed using a 6:1 H 2 O/HF solution, buffered with NH 4 F. To permit fair comparisons, we report values normalized with respect to the etch rate obtained from a thermal oxide standard formed in dry O 2 at 1000 °C. Figure plots the relative etch rate (RER) obtained from the films shown in Figure .…”

mentioning

confidence: 99%

Digital Control of SiO₂ Film Deposition at Room Temperature

2009

View full text Add to dashboard Cite

In this Letter, we propose and demonstrate a robust process for digital control of high quality SiO 2 thin films at room temperature using pulsed plasma-enhanced chemical vapor deposition (PECVD). Plasma activation of the SiCl 4 precursor is critical, as atomic layer deposition does not occur under these conditions. Subangstrom control over deposition rate was obtained by adjusting the density of SiCl 4 present at plasma ignition. The intrinsic refractive index of 1.46 was obtained at rates between 0.8 and 1.6 Å/pulse. No impurities were detected by either X-ray photoelectron spectroscopy (XPS) or Fourier transform infrared (FTIR) in films deposited under optimal conditions. Atomic layer deposition (ALD) is a leading technique for thin film deposition. Growth proceeds through cycles of sequential, self-limiting surface reactions that impart nanoscale control over thickness and composition. Since its inception over three decades ago, 1 ALD has been refined and successfully demonstrated for numerous materials, particularly metal oxides. 2 However, a number of materials have proven difficult to deposit by ALD. Perhaps the most auspicious example is silicon dioxide, given its role as the most important and widely used dielectric in the integrated circuit industry. 3 The outstanding chemical, optical, and electrical properties of vapor-deposited SiO 2 make it an important component for photovoltaics, 4,5 optics, 6 and barrier applications. 7,8 Continued miniaturization of device structures and the extension to flexible substrates requires deposition techniques that impart nanoscale control over thickness at low temperature. Despite the critical importance of SiO 2 and maturation of ALD technology, a robust, low temperature process for digital control of SiO 2 growth remains elusive.A primary challenge to SiO 2 ALD is overcoming the limited reactivity of silicon-containing precursors. The George group first demonstrated silica ALD using SiCl 4 and H 2 O as coreagents, with the two separate half-reactions combining to produce the overall reaction SiCl 4 + 2H 2 O f SiO 2 + 4HCl. 9 However, this group also acknowledged the limitations of this process including high temperature requirements (600-800 K), large reactant exposure (∼10 9 L, 1 L ) 10 -6 Torr · s), and the production of corrosive HCl as a reaction product. 10 Low temperature (<200°C ) processing is critical for extending ALD to temperaturesensitive substrates and biological applications and to maintain device integrity. To this end, a number of groups have developed catalytic reaction strategies in order to reduce the temperature requirements. 10-12 Though high rates 12 and room temperature 10,11 synthesis have been demonstrated, these processes create added complexity and raise concerns about impurity incorporation. 13 Plasma-enhanced ALD (PE-ALD) has been demonstrated to reduce temperature requirements by employing plasma generated radicals (O) to complete the oxidation step. 14 Jiang and co-workers accomplished PE-ALD of silica at room temperature using TEOS ...

show abstract

mentioning

confidence: 99%

Digital Control of SiO₂ Film Deposition at Room Temperature

2009

View full text Add to dashboard Cite

show abstract

Optical characterization of polysilazane based silica thin films on silicon substrates

Ricci

Gulleri

Fumagalli

et al. 2013

Applied Surface Science

View full text Add to dashboard Cite

Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

Zhou,

Chang,

Yen

et al. 2024

IEEE Electron Device Lett.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Deposition temperature determination of HDPCVD silicon dioxide films

Cited by 4 publications

References 4 publications

Digital Control of SiO₂ Film Deposition at Room Temperature

Digital Control of SiO₂ Film Deposition at Room Temperature

Optical characterization of polysilazane based silica thin films on silicon substrates

Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

Contact Info

Product

Resources

About

Deposition temperature determination of HDPCVD silicon dioxide films

Cited by 4 publications

References 4 publications

Digital Control of SiO2 Film Deposition at Room Temperature

Digital Control of SiO2 Film Deposition at Room Temperature

Optical characterization of polysilazane based silica thin films on silicon substrates

Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

Contact Info

Product

Resources

About

Digital Control of SiO₂ Film Deposition at Room Temperature

Digital Control of SiO₂ Film Deposition at Room Temperature