Deposition Time-Dependant Properties of PbS Thin Films

Tippasani, Srinivasa Reddy; Krishna, S. Vijaya; Kumar, M. C. Santhosh

doi:10.1007/978-981-99-1616-0_6

Cited by 2 publications

(1 citation statement)

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“…Al-doped PbS thin film was deposited onto a glass substrate by using a CBD method. Substrate cleaning procedure was previously reported elsewhere [22]. Next, a mixture of 0.1 M of lead acetate, 1 M of TEA (complexing agent), and 0.1 M of thiourea solutions were taken in a beaker.…”

Section: Preparation Of Aluminum Doped Pbs Thin Filmsmentioning

confidence: 99%

Facile synthesis and characterization of PbS thin films doped with various aluminum concentrations for photovoltaic applications

Reddy,

Vijaya Krishna,

Vinaya Kumar

et al. 2024

Semicond. Sci. Technol.

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In this study, aluminum doped lead sulfide (PbS:Al) thin films were deposited on soda lime glass substrates using chemical bath deposition (CBD) technique. The structural, morphological, optical and electrical properties of as-deposited PbS thin films were studied as a function of Al concentration (0, 2, 4, 6, 8 at. %). The deposited films can be analyzed using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), UV-Vis-NIR spectroscopy and Hall measurement. From SEM, it was evident that the thickness of the films decreased from 750 nm (0 at. %) to 280 nm (8 at. %) with increased Al concentration. XRD analysis revealed that the prepared films exhibited face centered cubic structure without any other binary phases. The average crystallite size of the films decreased from 33.71 to 20.45 nm. The direct optical band gap values were increased from 0.90 to 1.29 eV. The optical parameters such as refractive index (n), extinction coefficient (k), real (ɛ1) and imaginary (ɛ2) parts of the dielectric constant were 1.51-2.04, 0.0035 – 0.0075, 2.50-6.20 and 0.005-0.16 respectively. The absorption coefficient (α) of all the deposited films was in the range of ≈105 cm-1. The electrical resistivity of the deposited films was found in the range of 102 -103 Ω.cm. The overall analysis indicate that the deposited PbS:Al thin film shows promise as an absorbing layer for heterojunction solar cell devices.

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Section: Preparation Of Aluminum Doped Pbs Thin Filmsmentioning

confidence: 99%