Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Huang, Shihao; Li, Cheng; Zhou, Zhiwen; Chen, Chengzhao; Zheng, Yanbing; Huang, Wei; Lai, Hongkai; Chen, Songyan

doi:10.1016/j.tsf.2011.09.023

Cited by 21 publications

(19 citation statements)

References 23 publications

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“…In the two-step growth method, a thin strain relaxed Ge seed layer is grown on Si substrate at a low temperature to suppress three dimensional islands growth. The growth continues at high temperature with high quality Ge layer grown on the Ge template layer [6]. The surface of the Ge layers grown with this method is smooth with surface roughness around 2 nm.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Ge Strain Relaxed Buffer on Si with Low Threading Dislocation Density

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Ge Strain Relaxed Buffer on Si with Low Threading Dislocation Density

et al. 2016

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“…Because of the hydrogen annealing at high temperature (∼825°C) employed during the initial Ge growth, the dislocation density is drastically decreased within a couple of hundred nanometers away from the top interface of GOI [16]. In addition, there should exist a large fraction of Si atoms near the top interface because of a strong inter-diffusion between the Si substrate and deposited Ge film during high temperature annealing [17].…”

mentioning

confidence: 99%

Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

Nam¹,

Kang²,

Brongersma³

et al. 2014

Opt. Lett.

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We report improved minority carrier lifetimes in n-type-doped and tensile-strained germanium by measuring direct bandgap photoluminescence from germanium-on-insulator substrates with various levels of defect density. We first describe a method to fabricate a high-quality germanium-on-insulator substrate by employing direct wafer bonding and chemical-mechanical polishing. Raman spectroscopy measurement was performed to assess the purity of the transferred layer on an insulator. Using time-resolved photoluminescence decay measurement, we observe that minority carrier lifetimes can be improved by over a factor of 3 as the defective top interface of our material stack is removed. Our high-quality germanium-on-insulator should be an ideal platform for high-performance, germanium-based photonic devices for on-chip optical interconnects.

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“…The ramping rates for heating and cooling were around Threading Dislocation Density Characterization. EPD has been widely used to characterize TDD of undoped Ge [32,39,40]. However, for doped Ge, the etch behaviors are quite different.…”

Section: Experiments Design Results and Discussionmentioning

confidence: 99%

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Zhou¹,

Covian²,

Lee³

et al. 2019

Opt. Mater. Express

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Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8 × 10 8 to 1.1× 10 9 cm −2 without defect annealing.With thermal cycling, these values reduced to 1-1.5× 10 8 cm −2 . The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing.However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies.

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Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template

Cited by 21 publications

References 23 publications

Epitaxial Growth of Ge Strain Relaxed Buffer on Si with Low Threading Dislocation Density

Epitaxial Growth of Ge Strain Relaxed Buffer on Si with Low Threading Dislocation Density

Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

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