Depth Distribution of Boron and Radiation Defects in Silicon Dual Implanted with B+ and N+ Ions

Abstract

Silicon wafers (〈100〉, n‐type) are implanted by 40 keV B+ ions to the doses of 1.2 × 1014 or 1.2 × 1015 cm−2 and then by 50 or 100 keV N+ ions to the doses in the range of 1.2 × 1014 to 1.2 × 1015 cm−2. The depth profiles of the implanted boron atoms are obtained using the 10B(n, α)7 Li nuclear reaction. The distributions of radiation defects are studied by the RBS‐channeling technique. The boron depth profiles show strong inward asymmetry which may be due to resisdual channeling. Additional nitrogen implantation almost does not affect the distribution of implanted boron ions. The effects of the implantation dose and energy of both B+ and N+ ions on the resulting damage formation in the dual implanted silicon are studied. Radiation (self) annealing is observed in the case of high dose dual implantation with boron and nitrogen ions.