Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

Voronkov, V. V.; Falster, R.; Kim, TaeHyeong; Park, SoonSung; Torack, T.

doi:10.1063/1.4817022

Cited by 9 publications

(17 citation statements)

References 17 publications

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“…The value of ρ O is taken to be 3 Â 10 15 cm À 2 [25]. The critical number of oxygen atoms m n O is calculated such that ð∂F tot =∂m O Þ m n O equals zero.…”

Section: Steady State Nucleation Rate Formulationmentioning

confidence: 99%

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An effective nucleation rate for oxide precipitation in Czochralski silicon and a simple framework for multi-step anneal calculations

Samanta

2015

Journal of Crystal Growth

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“…The value of ρ O is taken to be 3 Â 10 15 cm À 2 [25]. The critical number of oxygen atoms m n O is calculated such that ð∂F tot =∂m O Þ m n O equals zero.…”

Section: Steady State Nucleation Rate Formulationmentioning

confidence: 99%

“…The separate treatment of surface and edge energy terms in free energy formulation is used previously in [25]. Briefly, the surface energy term is proportional to m O , number of oxygen atoms in the precipitate phase and the edge energy term is proportional to m O 1/2 .…”

Section: Free Energy Formulationmentioning

confidence: 99%

An effective nucleation rate for oxide precipitation in Czochralski silicon and a simple framework for multi-step anneal calculations

Samanta

2015

Journal of Crystal Growth

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“…We conclude that BMD density in the bulk of the wafer is only due to oxygen precipitation. Voronkov et al [15] reported that in rapid thermal annealing (RTA) of a nitride-coated wafer with high temperature T = 1220 o C, the nitrogen did not become in-diffusion to the bulk from the wafer surface.…”

Section: Methodsmentioning

confidence: 99%

“…First step is to nucleate new precipitates or to enlarge already existing ones, and second step is to make the precipitates large enough to be detected. This annealing procedures are used to evaluate the oxygen precipitation performance of wafers [15]. In order to estimate BMD in each sample, the sample is done 2-step heat treatment (800 o C for 4 hours and 1000 o C for 16 hours).…”

Section: Methodsmentioning

confidence: 99%

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Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace

Choi¹,

정세영²,

심복철³

2016

Journal of the Korean Crystal Growth and Crystal Technology

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The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, 100~300 o C. BMD density with hot isostatic pressure treatment (HIP) at temperature of 850 o C is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

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About the influence of deposited nitride layers on oxide precipitation after RTA pre‐treatment

Kissinger

Kot²,

Dąbrowski

et al. 2017

Physica Status Solidi (a)

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In order to elucidate the influence of stress and in-diffused nitrogen on oxide precipitation after rapid thermal annealing (RTA), we carried out experiments with one-side and doublesided nitride layers accompanied by simulation models which help to understand the behavior of intrinsic point defects, nitrogen, and strain. We found that the presence of a nitride layer of any thickness, within the rage which we investigated, in direct contact with the silicon surface is sufficient to markedly change the precipitation behavior of interstitial oxygen after RTA at 1175 and 1250 8C. The presence of the nitride layer during the stabilization and growth of the oxide precipitates is not of any influence on the precipitation behavior. Therefore, the RTA of wafers covered with silicon nitride is the crucial step controlling the bulk microdefect (BMD) depth profiles. A 10 nm oxide between silicon substrate and nitride layer prevents any change of the BMD depth profile. Only in a direct contact with the nitride layers the vacancy supersaturation, which enhanced the oxide precipitation compared to wafers without nitride layers, was generated. Nitrogen peaks below the silicon surface generated by in-diffusion of nitrogen during RTA lead to an enhanced oxygen precipitation only for RTA at 1250 8C and not for RTA at 1175 8C. We propose a model based on very tiny coherent a-Si 3 N 4 precipitates generated at nitrogen-vacancy (NV) complexes which can act as nucleation sites for oxygen precipitation. Because the stability of NV seems limited to temperatures above 1200 8C, it would not be effective for RTA at 1175 8C. RTA treatment of silicon wafers with one-sided nitride layers at 1250 8C leads to very sharp and small defect denuded zones in subsequent annealing and would be suitable for proximity gettering. The depth of the denuded zone is nearly independent of the thickness of the nitride layer.

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Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

Cited by 9 publications

References 17 publications

An effective nucleation rate for oxide precipitation in Czochralski silicon and a simple framework for multi-step anneal calculations

An effective nucleation rate for oxide precipitation in Czochralski silicon and a simple framework for multi-step anneal calculations

Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace

About the influence of deposited nitride layers on oxide precipitation after RTA pre‐treatment

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