Description of the phase transitions of cuprous iodide

Shan, Yu; Li, Guangwu; Тиан, Ганг; Han, Jingquan; Wang, Changsheng; Liu, Shunquan; Du, Honglin; Yang, Yu

doi:10.1016/j.jallcom.2008.10.026

Cited by 24 publications

(25 citation statements)

References 16 publications

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“…In order to maintain the charge neutrality, it is believed that Cu 1+ can move into the interstitial site, acquiring a neutral charge (Cu 0 ) that can bring chemical equilibrium. The γ‐CuI phase has a zinc‐blende structure where I − ions form a face‐centered cubic (FCC) lattice with eight tetrahedral interstitial sites, among which the four Cu + ions occupy half of the available tetrahedral sites leaving half of them as empty voids . The lattice parameter of CuI is ≈6.056 Å and results in a volume of the unit cell of 222.1 Å 3 .…”

Section: Resultsmentioning

confidence: 99%

“…The g-CuI phase has az inc-blende structure where I À ions form af ace-centered cubic (FCC) lattice with eight tetrahedral interstitial sites,a mong which the four Cu + ions occupyh alf of the available tetrahedral sites leaving half of them as emptyv oids. [44] Thel attice parameter of CuI is % 6.056 and results in av olume of the unit cell of 222.1 3 . Thet otal volume occupied by the Cu and Ii ons together, estimatedu sing their ionic radii,i sf ound to be 175.26 3 .…”

Section: Resultsmentioning

confidence: 99%

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Defect‐Controlled Copper Iodide: A Promising and Ecofriendly Thermoelectric Material

Mulla

Rabinal

2018

Energy Tech

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Earth‐abundant and non‐toxic materials are important in the utilization of thermoelectric technology. Here, the thermoelectric behavior of copper iodide (CuI), which is prepared in bulk using a simple synthetic approach, is reported. The as‐prepared CuI has a high Seebeck coefficient of ≈431 μV K−1 with a resistivity ≈0.26 Ω cm−1, resulting in a room temperature thermoelectric power factor of ≈70 μW m−1 K−2. The thermoelectric properties are tuned by changing the defect chemistry via thermal annealing. Annealing at moderate temperatures (≈400 K) improves thermoelectric power factor, from its room temperature value of ≈142 μW m−1 K−2 to ≈160 μW m−1 K−2 at 353 K. Detailed analysis reveals that this is caused by iodine depletion upon annealing, which compensates for the intrinsic defects present in the form of copper vacancies that are responsible for the p‐type conductivity of the CuI.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Defect‐Controlled Copper Iodide: A Promising and Ecofriendly Thermoelectric Material

Mulla

Rabinal

2018

Energy Tech

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“…The element ratio of Cu to I in the film is 1.06, which is calculated from the counts of Cu and I. It is known that CuI is unstable at high temperature [9], thus, iodine will run off from CuI film unavoidably at the substrate temperature of 463 K. Figure 3 presents the XRD patterns of the CuI films deposited on quartz substrates with and without iodine annealing. As a comparison, the pattern of CuI powder is also shown here.…”

Section: Resultsmentioning

confidence: 99%

Luminescence characteristics of CuI film by iodine annealing

Xia

Liu

et al. 2015

J Mater Sci: Mater Electron

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P-type CuI semiconductor films were deposited on the quartz substrates by vacuum evaporation technique, and their morphology, chemical stoichiometry, structure and photoluminescence (PL) characteristics were investigated. The results indicated that, by iodine annealing, the 422 nm emission of the film was improved, whereas the 720 nm emission was reduced, and a (111) preferred orientation in the film was kept unchanged. Through analyzing the time-dependent PL spectrum and the conductivity of the iodine annealed CuI film, the origin of the 422 nm emission was proposed to be related to the copper vacancy. This mechanism was further confirmed by the luminescence characteristics of the film deposited on Cu substrate.

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“…CuI has three crystalline phases: a, b and c [7], and normally exists in the low-temperature c-phase with zinc blend structure. In recent years, c-CuI has attracted steadily growing interest due to its ultrafast scintillation property [8,9] with a decay time of about 90 ps at room temperature and it is the fastest inorganic scintillation crystal at present.…”

Section: Introductionmentioning

confidence: 99%