Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

Touati, Zine-eddine; Hamaizia, Z.; Messai, Zitouni

doi:10.1016/j.jsamd.2019.01.001

Cited by 44 publications

(25 citation statements)

References 37 publications

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“…Moreover, E-mode GaN HEMTs have attracted much attention for use in power switching applications, owing to their high breakdown voltage and low on-resistance. [3][4][5][6][7][8][9] Several techniques have been used to design E-mode GaN devices, all of which incorporate technologies that empty the 2DEG channel underneath the gate at zero gate bias. The recessed-gate structure is one of the approaches for designing E-mode GaN HEMTs for use in power electronic applications.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

Sharbati

Gharibshahian

Ebel

et al. 2021

Journal of Elec Materi

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A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

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Section: Introductionmentioning

confidence: 99%

“…Fig 6. The 2DEG charge density of the recessed-gate GaN HEMT structures versus the recess height for various barrier thicknesses.…”

mentioning

confidence: 99%

Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

Sharbati

Gharibshahian

Ebel

et al. 2021

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…According to Figure A, the gate‐source capacitance of the RPC‐HEMT fluctuates across the frequency compared with the C‐HEMT at V DS = 27 V and V GS = −1 V. In addition, the gate‐drain capacitance of the RPC‐HEMT increases in comparison with the C‐HEMT in the same bias, as shown in Figure B. However, enhancement in the gate‐drain capacitance of the RPC‐HEMT is less than the reduction in its gate‐source capacitance …”

Section: Resultsmentioning

confidence: 95%

“…Many studies have been developed to identify the important parameters that play a dominant role, depending on the specific case study, for example, the origin of kink effects in S 22 and h 21 . In addition, some articles analyze and optimize the main characters in HEMT devices …”

Section: Introductionmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

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In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S22) and the short‐circuit current gain (h21) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

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“…In the application of electronic devices, GaN material has the characteristics of high breakdown eld strength and high electron mobility compared with the previous two generations of semiconductors, which makes it have great advantages in the eld of high frequency and high power [1][2][3]. The band gap of gallium nitride is 3.4eV, which is 2eV higher than Si and GaAs, which ensures that the device can work normally in a radiation environment without failure; third-generation semiconductor materials such as gallium nitride and silicon carbide strike [4][5][6][7]. Compared with Si and GaAs, the breakdown eld of the third-generation semiconductor materials such as GaN and SiC is one order of magnitude higher [8].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Electrical Characterization of AlGaN/GaN HEMT with Multi-finger Gate

Zhao

et al. 2021

Preprint

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This paper presents an exhaustive TCAD based comparison of the multi-gate and T-gate AlGaN/GaN HEMT. This paper simulates the DC and RF characteristics of the device and makes an accurate comparison. The important feature of the device such as threshold voltage, drain current output characteristics, transconductance, cut-off frequency, and maximum oscillation frequency were obtained. It is concluded that the shape optimization of the HEMT with multi-finger gates and the advantages over traditional T-gate devices. The device of two-finger gate with 50nm spacing has the best output characteristics, and its maximum saturation current is about 110% the size of the device of four-finger gate with 200nm at VGS=0V. And the gm and the gain of the device with 50nm spacing two-finger gate is 76mS/mm larger than the HEMT of three-finger gate with 200nm. In addition, we also conducted a simulation in the case of changing only refers to finger-gate length and cap-gate length. And it is concluded that the two-finger gate HEMT with 250nm finger-gate length and 2.0µm cap-gate length has the best output characteristics, which output current is 0.159 A/µm at VGS=-1.5V. The results show that AlGaN/GaN HEMT with multi-finger gate have great potential for high power and high frequency applications electronic devices.

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Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications

Cited by 44 publications

References 37 publications

Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Comparison of Electrical Characterization of AlGaN/GaN HEMT with Multi-finger Gate

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