Design and analysis of a low-voltage electrostatic actuated RF CMOS-MEMS switch

Ya, Ma Li; Nordin, Anis Nurashikin; Soin, Norhayati

doi:10.1109/rsm.2013.6706468

Cited by 11 publications

(5 citation statements)

References 9 publications

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“…This phenomenon is called pull-in instability [99] and the corresponding potential difference, which is a critical value, is called the pull-in voltage. The thin dielectric layer exists to form a coupling capacitor between the electrodes [100]. When the two come into contact, the coupling capacitance becomes so large that the switch is turned off.…”

Section: Electrostatic Switchesmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.

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Section: Electrostatic Switchesmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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“…Furthermore, reference [11] presented a switch with -0.8 dB insertion loss and -30 dB isolation at 40 GHz frequency using a 25 V output voltage. Finally, reference [12] utilized a 3 V output voltage at 40 GHz frequency, and reference [13] achieved -9 dB insertion loss and -42 dB isolation at 13.5 GHz frequency with a 15-16 V output voltage.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Micro-Pump Efficiency: Multi-Objective Optimization of Low Voltage MEMS Switches for Drug Delivery Applications

Ardehshiri,

Soltanian‬‏,

Moradkhani

et al. 2024

Digital Technol. Res. Appl.

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This paper introduces an innovative approach for designing, optimizing, and simulating a low voltage MEMS switch specialized for micro-pump applications. The primary goal is to improve the efficiency of micro-pumps used in drug delivery. The design process focuses on tailoring the switch’s geometry for micro-pump purposes and employs objective functions encompassing actuation voltage, insertion loss in the up-state, and isolation in the down-state. To solve the intricate optimization task, mathematical programming is combined with the Multi-Objective Particle Swarm Optimization (MOPSO) meta-heuristic algorithm, enabling simultaneous consideration of actuation voltage, insertion loss, and isolation. By analyzing the Pareto front derived from these parameters, the study identifies design requirements and optimal levels for the switch. The proposed MEMS switch demonstrates remarkable performance metrics, including and values of –11.74 dB and –34.62 dB at 40 GHz, a pull-in voltage of 2.8 V, and an axial residual stress of 25 MPa. This research presents an innovative strategy for optimizing capacitive switch MEMS models, using a multi-objective approach and the MOPSO algorithm to enhance efficiency in micro-pump applications.

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“…In this regard, a large number of studies has been conducted: The capacitor switch was placed on a glass sub layer with the isolation of −35 dB and the insertion loss of −0.4 dB in a frequency range of 0 to 20 GHz (Guo et al , 2003; Liu et al , 2015). Provided a switch with low spring constant and the actuation voltage of 7 V. A switch is presented in (Ma et al , 2016), in which the insertion loss of −5.6 dB and an isolation of −24.38 dB are obtained from an output voltage of 3.04 V at a frequency of 40 GHz, using the design of the experiment. A switch is presented in Shekhar et al (2018) in which the insertion loss of −0.7 dB and an isolation of −30 dB are obtained from an output voltage of 4.8-6.8 V at a frequency of 40 GHz. A switch is presented in Deng et al (2015) in which the insertion loss of −3 dB and an isolation of −13 dB are obtained from an output voltage of 11.7 V at a frequency of 40 GHz. A switch is presented in Sravani et al (2018) in which the insertion loss of −0.34 dB and an isolation of −72.4 dB are obtained from an output voltage of 12 V at a frequency of 40 GHz. A switch is presented in Molaei and Ganji (2017) in which the insertion loss of −0.8 dB and an isolation of −30 dB are obtained from an output voltage of 25 V at a frequency of 40 GHz. A switch is presented in Ya et al (2013) in which an output voltage of 3 V at a frequency of 40 GHz is used applying the design of the experiment. …”

Section: Introductionmentioning

confidence: 99%

“…A switch is presented in Ya et al (2013) in which an output voltage of 3 V at a frequency of 40 GHz is used applying the design of the experiment.…”

Section: Introductionmentioning

confidence: 99%

Design and optimization of a low voltage RF switch MEMS capacitance using genetic algorithm and Taguchi method

Ardehshiri

Karimi

Dehdasht-Heydari

2019

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Purpose This paper aims to design, optimize and simulate the Radio Frequency (RF) micro electromechanical system (MEMS) Switch which is stimulated by electrostatically voltage. Design/methodology/approach The geometric structure of the switch was extracted based on the design of Taguchi-based experiment using the mathematical programming and obtaining objective function by the genetic meta-heuristic algorithm. Findings The RF parameters of the switch were calculated for the design of Taguchi-based S11 = −5.649 dB and S21 = −46.428 dB at the working frequency of 40 GHz. The pull-in voltage of the switch was 2.8 V and the axial residual stress of the proposed design was obtained 28 MPa and the design of Taguchi-based S11 = −4.422 dB and S21 = −48.705dB at the working frequency of 40 GHz. The pull-in voltage of the switch was 2.5 V and the axial residual stress of the proposed design was obtained 25 MPa. Originality/value A novel complex strategy in the design and optimization of capacitive RF switch MEMS modeling is proposed.

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Design and analysis of a low-voltage electrostatic actuated RF CMOS-MEMS switch

Cited by 11 publications

References 9 publications

Research Status and Development Trend of MEMS Switches: A Review

Research Status and Development Trend of MEMS Switches: A Review

Enhancing Micro-Pump Efficiency: Multi-Objective Optimization of Low Voltage MEMS Switches for Drug Delivery Applications

Design and optimization of a low voltage RF switch MEMS capacitance using genetic algorithm and Taguchi method

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