Design, and Analysis of Capacitive Shunt RF MEMS Switch for Reconfigurable Antenna

Mohan, C. Leela; Kavya, K. Ch. Sri; Kotamraju, Sarat K.

doi:10.1007/s42341-020-00212-0

Cited by 8 publications

(4 citation statements)

References 12 publications

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“…Period necessities to initiate the transition amount inherently within the ON state shifted among the field of OFF-State & from OFF-State to ON-State determines the period of switching [19] along with formulating the equation as follows,…”

Section: Switching Time Analysis Impactmentioning

confidence: 99%

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Mohan¹,

Kavya²

2022

Int. j. commun. netw. inf. secur.

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The design of RF-MEMS Switch is useful for future artificial intelligence applications. Radio detection and range estimation has been employed with RF MEMS technology. Attenuators, limiters, phase shifters, T/R switches, and adjustable matching networks are components of RF MEMS. The proposed RF MEMS technology has been introduced in T/R modules, lenses, reflect arrays, sub arrays and switching beam formers. The uncertain RF MEMS switches have been faced many issues like switching and voltage alterations. This study aims in the direction of design, simulation, model along with RF MEMS switching analysis including consistent curving or meandering. The proposed RF MEMS Switch is a flexure form of the Meanders that attain minimal power in nominal voltage. Moreover, this research work highlights the materials assortment in case of beam along with signal-based dielectric. The performance analysis is demonstrated for various materials that have been utilized in the design purpose. Further, better isolation is accomplished at the range of -31dB necessary regarding 8.06V pull-in voltage through a spring constant valued at 3.588N/m, switching capacitance analysis has been found to be 103 fF at ON state and 7.03pF at OFF state and the proposed switch is optimized to work at 38GHz. The designed RF MEMS switch is giving 30% voltage improvement; switching frequency is improved by 21.32% had been attained, which are outperformance the methodology and compete with present technology.

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Section: Switching Time Analysis Impactmentioning

confidence: 99%

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Mohan¹,

Kavya²

2022

Int. j. commun. netw. inf. secur.

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“…Switch-beam capacitance rises when a DC voltage is placed between the MEMS Bridge to the CPW, resulting in an electric forces causing switch beam collapsing on the dielectric substrate [20] [21]. CPW transmission line is connected to the ground through this capacitor [22] [23].…”

Section: Fig 1 -Switch With Si3n4/hfo2 Dielectricmentioning

confidence: 99%

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

Gandhi¹,

Govardhani²,

Narayana³

2022

IJIE

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The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20. The performance metrics like Length 25.34 μm, Width 28.92 μm and Thickness 34.42 μm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications.

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“…The HFSS tool is used for calculating scattering parameters of proposed switches. Return and insertion losses are evaluated during up state condition of switch, whereas isolation is evaluate during down state condition of switch, [20][21][22].…”

Section: Electromagnetic Analysismentioning

confidence: 99%

Performance Comparison Of Shunt Rf Mems Switches

Gandhi¹

2021

TURCOMAT

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This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

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Design, and Analysis of Capacitive Shunt RF MEMS Switch for Reconfigurable Antenna

Cited by 8 publications

References 12 publications

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

Performance Exploration of Uncertain RF MEMS Switch Design with Uniform Meanders

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

Performance Comparison Of Shunt Rf Mems Switches

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