Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing

Jayaswal, Neha; Raman, Ashish; Kumar, Naveen; Singh, Sarabdeep

doi:10.1016/j.spmi.2018.11.009

Cited by 37 publications

(18 citation statements)

References 17 publications

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“…The channel current I ds can be changed by work function variations due to gas molecule adsorption. 62,63 The increase in the work function will change the charge carrier in the channel region, 64 leading to a decrease in the channel current. Hence, the value of the channel current change depends on the charge carrier variation, which is decided by the work function variations.…”

Section: Resultsmentioning

confidence: 99%

“…The relatively low negative binding energies indicate that HCHO gas molecules are physically adsorbed onto the Pd/Au surface by a weak van der Waals interaction at room temperature. , The CNT channel covered under the dielectric layer is not directly exposed to the outside environment. The channel current I ds can be changed by work function variations due to gas molecule adsorption. , The increase in the work function will change the charge carrier in the channel region, leading to a decrease in the channel current. Hence, the value of the channel current change depends on the charge carrier variation, which is decided by the work function variations.…”

Section: Results and Discussionmentioning

confidence: 99%

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Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

Liu

Cao

et al. 2021

ACS Appl. Mater. Interfaces

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The detection of harmful trace gases, such as formaldehyde (HCHO), is a technical challenge in the current gas sensor field. The weak electrical signal caused by trace amounts of gases is difficult to be detected and susceptible to other gases. Based on the amplification effect of a field-effect transistor (FET), a carbon-based FET-type gas sensor with a gas-sensing gate is proposed for HCHO detection at the ppb level. Semiconducting carbon nanotubes (s-CNTs) and a catalytic metal are chosen as channel and gate materials, respectively, for the FET-type gas sensor, which makes full use of the respective advantages of the channel transport layer and the sensitive gate layer. The asprepared carbon-based FET-type gas sensor exhibits a low detection limit toward HCHO up to 20 ppb under room temperature (RT), which can be improved to 10 ppb by a further heating strategy. It also exhibits a remarkable elevated recovery rate from 80 to 97% with almost no baseline drift (2%) compared to the RT condition, revealing excellent reproducibility, stability, and recovery. The role of sensitive function in the FET-type gas sensor is performed by means of an independent gas-sensing gate, that is, the independence of the sensitive gate and the electron transmission channel is the main reason for its high sensitivity detection. We hope our work can provide an instructive approach for designing high-performance formaldehyde sensor chips with on-chip integration potential.

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Section: Resultsmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

Liu

Cao

et al. 2021

ACS Appl. Mater. Interfaces

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“…'P' is the target gas partial pressure taken as 2.5 Pa [29]. The variations in threshold voltage (VTH) and flat-band voltage (VFB) owing to the variation in work function (∆φM), leads to a change in on and off currents given by equation ( 2) [18], [30]:…”

Section: Hydrogen Sensing Modelmentioning

confidence: 99%

“…where φ M and φ S are the metal and Si work functions respectively. The sub-threshold current can be represented using the expression [30]:…”

Section: Hydrogen Sensing Modelmentioning

confidence: 99%

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

Ghosh

Rajan

Varghese

2022

IEEE Trans. Nanotechnology

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Presented through this work is an investigation of junctionfree gate-stacked (SiO2 + high-k) double gated vertical tunnel field-effect transistor (JF-GS-VTFET) with focus on its hydrogen (H2) sensing performance at room temperature (RT) for the first time. JF-GS-VTFET with vertically characterized channel length feature minimizes short channel effects (SCEs), elevates gate controllability over regular TFETs without the presence of any sharp doping gradient. A systematical study of the sensing performance is demonstrated through effective variations in Palladium (Pd) and Gold (Au) catalytic metal gate work functions corresponding to the concentration of hydrogen appearing at the gate metal surface. A concentration dependent thorough analysis has been illustrated in terms of energy band, potential, transfer and transient characteristics. Sensing capability of the device have been analyzed in terms of variations in detecting parameters such as transconductance (gm), off current, on current, threshold voltage and sub-threshold slope in presence of the target gas using SILVACO ATLAS TCAD. At 1.04 ppm H2 gas concentration, the optimally designed sensor exhibits high ION/IOFF ratios in the order of ~𝟏𝟎 𝟏𝟑 and ~𝟏𝟎 𝟏𝟏 , high gm sensing responses of 99.98% and 98.93%, high off current sensing responses of ~𝟏. 𝟖𝟗𝟓 × 𝟏𝟎 𝟒 and ~1. 𝟒𝟕 × 𝟏𝟎 𝟒 , better sub-threshold swing sensing responses of ~0.71 and ~0.55, increased threshold voltage sensing responses of ~0.27 and ~0.25 for Pd and Au metal gates respectively at RT. Perceptible outcomes in terms of interface trap charge density have also been presented to recognize RT H2 sensing.

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“…Among various gases, ammonia (NH3) gas is the crucial base material for different chemical products and is used in food packaging industries, agriculture, medical diagnostics labs, and fertilizer industries [6]. However, ammonia is a colorless gas with a suffocating smell and, if accidentally leaked, could be hazardous to living beings [7].…”

Section: Introductionmentioning

confidence: 99%

Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor

Verma

Singh

Tripathi³

et al. 2021

Silicon

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In this work, an ultrathin 3 nm nanowire field-effect transistor (NWFET) based ammonia gas sensor is designed, and its sensitivity is analyzed at room temperature. The designed NWFET for gas sensing is observed to have a higher ratio of ION to IOFF than 10 9 , lower DIBL and better gate controlling due to a higher surface to volume ratio. The gas-sensing performance analysis has been done for three different catalysts, iridium (Ir), ruthenium (Ru), and palladium (Pd), by gradually increasing the work function by a difference of 50meV. The device showed higher OFF current sensitivity compared to ON current sensitivity. The power consumption and threshold voltage are observed to be least for palladium catalytic gate electrodes making palladium the most favorable catalytic for ammonia gas for the designed gas sensor.

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Design and analysis of electrostatic-charge plasma based dopingless IGZO vertical nanowire FET for ammonia gas sensing

Cited by 37 publications

References 17 publications

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

Carbon Nanotube-Based Field-Effect Transistor-Type Sensor with a Sensing Gate for Ppb-Level Formaldehyde Detection

Junctionfree Gate Stacked Vertical TFET Hydrogen Sensor at Room Temperature

Design and Performance Analysis of Ultrathin Nanowire FET Ammonia Gas Sensor

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