2010 Help me understand this report
Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers
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“…The heterostructures were grown using molecular beam epitaxy at the US Army Research Laboratory, Adelphi, MD. Cracking defects in the thin films were revealed during device fabrication, leading to an investigation into an alternative device structure with indium phosphide (InP) layers to improve the growth quality [22,23].…”
Section: Symmetric Gain Optoelectronic Mixersmentioning
confidence: 99%
“…The heterostructures were grown using molecular beam epitaxy at the US Army Research Laboratory, Adelphi, MD. Cracking defects in the thin films were revealed during device fabrication, leading to an investigation into an alternative device structure with indium phosphide (InP) layers to improve the growth quality [22,23].…”
Section: Symmetric Gain Optoelectronic Mixersmentioning
confidence: 99%
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