Design and Analysis of MIM Capacitor on Power Integrity Effects for HPC and Network Applications

Moon, Sungwook; Nam, Senungki; Kang, Minseok; Lee, Yongho

doi:10.1109/isemc.2019.8825290

Cited by 10 publications

(2 citation statements)

References 5 publications

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“…Metal–insulator–metal (MIM) structures have been widely used in a variety of devices such as decoupling capacitors in the back end of line (BEOL), radio frequency decoupling devices in analog integrated circuits, and energy storage capacitors. − Among them the MIM decoupling capacitors have been utilized in Intel 10 nm SuperFin Technology. − The persistent pursuit of performance leads to the aggressive scaling of the equivalent oxide thickness (EOT) of MIM capacitors . However, the high-performance MIM capacitors with high capacitance and low leakage current prepared with a low thermal budget are still a challenge.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric Constant Enhancement and Leakage Current Suppression of Metal–Insulator–Metal Capacitors by Atomic Layer Annealing and the Capping Layer Effect Prepared with a Low Thermal Budget

Wang

Huang

Chou

et al. 2023

ACS Appl. Electron. Mater.

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A high-quality nanoscale oxide layer with a high dielectric constant and a low leakage current prepared at a low thermal budget is critical to advanced metal–insulator–metal (MIM) devices. In this study, the film density, crystallinity, dielectric constant, and leakage current of the ZrO2 thin film are significantly improved by the atomic layer annealing (ALA) and the titanium nitride (TiN) capping layer effect at a low process temperature of only 300 °C without any postannealing treatment. Hence a high ZrO2 dielectric constant of 35.2, a low equivalent oxide thickness of 0.64 nm, and a leakage current density lower than 10–7 A/cm2 are demonstrated in the MIM capacitors. This study demonstrates the significant impacts of the ALA and capping layer effects on the film quality and electrical characteristics of nanoscale thin films for high-performance devices.

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Section: Introductionmentioning

confidence: 99%

“…6−8 The persistent pursuit of performance leads to the aggressive scaling of the equivalent oxide thickness (EOT) of MIM capacitors. 9 However, the high-performance MIM capacitors with high capacitance and low leakage current prepared with a low thermal budget are still a challenge.…”

Section: ■ Introductionmentioning

confidence: 99%