Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

Das, Samadrita; Lenka, Trupti Ranjan; Talukdar, Fazal A.; Velpula, Ravi Teja; Nguyen, Hieu Pham Trung

doi:10.1007/s11082-022-04350-y

Cited by 4 publications

(2 citation statements)

References 52 publications

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“…The radiative recombination in all the QWs of LED 3 is higher, as displayed in Figure 4d, because of better overlap of the carrier wave functions [38], minimization of electron leakage, and betterment in hole efficiency [39].…”

Section: Resultsmentioning

confidence: 98%

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Das,

Lenka,

Talukdar

et al. 2023

Micromachines

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In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters.

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Section: Resultsmentioning

confidence: 98%

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Das,

Lenka,

Talukdar

et al. 2023

Micromachines

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“…Thus, the study employs SiO 2 particles at nano-size as scattering regulators in the phosphor layer of the WLED. SiO 2 is one of the most investigated materials for enhancing scattering of photon and light extraction efficacy, leading to the increased external quantum efficacy of either quantum-dot LED or blue-pumped LED [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

STUDY OF K2SiF6:Mn4+@SiO2 PHOSPHOR FOR WHITE LEDS WITH HIGH ANGULAR COLOR UNIFORMITY

Ho,

Loan,

Lee

et al. 2024

J. ADV. ENG. COMPUT.

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The distinctive wide-band blue illumination absorption and red strait-line discharge of the phosphor K2SiF6:Mn4+ (KMnSF) make it an attractive material for manufacturing warm white light-emitting diodes (WLED). Nevertheless, using the highly corrosive raw ingredient HF to produce commercial KMnSF red phosphor has negative effects on the environment and people. In this study, microfluidic technology was used to successfully manufacture the KMnSF without the need for HF compound while resulting in a phosphor product with homogenous granule shape and size. The luminescence capabilities of the KMnSF samples were then thoroughly examined and characterized. Eventually, we made WLED packages comprising of blue LED chips, yellow phosphor Y3Al5O12:Ce3+ (YGA:Ce), red phosphor KMnSF, and SiO2 scattering particle. Via varying the SiO2 concentration during the simulation process, the prepared WLED’s optical performances are obtained. The scattering properties of the phosphor layer as well as the lighting transmission and distribution were simulated with the utilization of both LightTools software and Monte Carlo theory. According to the outcomes, the microfluidic-synthesized K2SiF6:Mn4+ proves to be appropriate for WLED apparatuses. Besides, the proposed phosphor compound with SiO2 scattering particles showed the improvement in luminous flux and angular uniformity of the WLED.

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Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications

Kumar,

Chaudhary,

Raj

2024

J. Electron. Mater.

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Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

Cited by 4 publications

References 52 publications

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

STUDY OF K2SiF6:Mn4+@SiO2 PHOSPHOR FOR WHITE LEDS WITH HIGH ANGULAR COLOR UNIFORMITY

Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications

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