Design and Analysis of Robust Dual Threshold CMOS Full Adder Circuit in 32nm Technology

Islam, Aminul; Akram, M. W.; Pable, S. D.; Hasan, Mohd.

doi:10.1109/artcom.2010.20

Cited by 14 publications

(5 citation statements)

References 9 publications

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“…The solution presented in this work is the use of a dual-threshold configuration [66,67] which provides a lower noise margin and higher voltage swing at the output compared to the diode-load and the dual-gate topology, respectively. Dual-threshold technology has been studied for several years and applied to the silicon technology, achieving power consumption reductions [68,69] and increasing the performance of the system in different aspects as delay [68,70], robust designs [71], asynchronous circuits [72], speed improvement [73] or glitch minimization [74]. The interdigitated and Corbino devices developed in this work present different electrical characteristics, such as V T .…”

Section: Unipolar Organic Dual-geometry Threshold Voltage Invertermentioning

confidence: 99%

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

Arnal

Martínez‐Domingo

Ogier³

et al. 2019

Crystals

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It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output.

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Section: Unipolar Organic Dual-geometry Threshold Voltage Invertermentioning

confidence: 99%

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

Arnal

Martínez‐Domingo

Ogier³

et al. 2019

Crystals

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show abstract

Section: Unipolar Organic Dual-geometry Threshold Voltage Invertermentioning

confidence: 99%

Thin Film Transistor

2019

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Light sources tend to affect images captured in any automatic optical inspection (AOI) system. In this study, the effectiveness of metal-halide lamps, quartz-halogen lamps, and LEDs as the light sources in AOI systems for the detection of the third and fourth layers electrodes of thin-film-transistor liquid crystal displays (TFT-LCDs) is examined experimentally. The results show that the performance of LEDs is generally comparable or better than that of metal-halide and quartz-halogen lamps. The best optical performance is by the blue LED due to its spectrum compatibility with the time-delay-integration charged-coupled device (TDI CCD) sensor and its better spatial resolution. The images revealed by the blue LED are sharper and more distinctive. Since current LEDs are more energy efficient and environmentally friendly, using LEDs as the light source for AOI is very beneficial. As the blue LED performs the best, it should be adopted for AOI using TDI CCD sensors.

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“…Technology scaling, as stated by Moore where the transistor count in a chip should double at about every two years, is a significant factor in the ascendance of Integrated Circuits (ICs), providing higher transistor densities and voltage scaling due to the miniaturization of gate dimensions, internal capacitance, and resistance. Such improvements provided the IC designers with plenty of processing power per area unit of a chip and energy efficiency, making it the perfect combination for the usage of ICs in mobile applications [1].…”

Section: Introductionmentioning

confidence: 99%

FinFET Inverter Designs: Behavior and Challenges of Process Variability

Moraes

Zimpeck

Minhardt

et al. 2021

JICS

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Abstract— Technology scaling alongside the increasing process variability impact in modern technology nodes are themain reasons to control deviations over metrics in IC nanome-ter designs. Schmitt Triggers are traditionally used for noise immunity enhancement, and have been recently applied to mitigate radiation effects and process variability impact. The main contribution of this work is to trace the relationship between transistor sizing, supply voltage, and process variability to get a low energy consumption circuit while still keeping low levels of deviations due to the impact of process-induced variability. It is shown that a cost-benefit analysis can highlight sets of sizing and supply voltage where it can provide a 37.51% decrease in energy consumption while only increasing its sensibility by 7.42%. Furthermore, it is presented that the dependence of supply voltage and sensibility to process variability is not directly related, with slight decreases in the supply volt-ages bringing better results. Overall, the traditional CMOS inverter is still the fastest and most energy-efficient circuit, although, when comparing noise immunity characteristics, the 6-Transistor Schmitt Trigger presents higher noise margins, slopes, gains, and hysteresis ratios. The improvements,although, may increase propagation times, energy consumption, and area.

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Design and Analysis of Robust Dual Threshold CMOS Full Adder Circuit in 32nm Technology

Cited by 14 publications

References 9 publications

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

Thin Film Transistor

FinFET Inverter Designs: Behavior and Challenges of Process Variability

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