Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices

Abstract

In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50‐μm thick p‐type BN on a 0.2‐μm thick p‐type germanium thin film. The modeling of current–voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak‐to‐valley current ratio of (PVCR) of 63 at a peak (Vp) and valley (Vv) voltages of 1.84 and 2.30 V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0–3.0 GHz displayed a bandstop filter properties with notch frequency (fn) of 2.04 GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted fn and Q to 2.70 GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

“…PVCR of 6.2 is reported for AlSb/GaInAsSb quantum well RTD's 16 . PVCR of 62 was also observed for Ge/BN interfaces 17 . These types of devices occupy large space in communication technology as they are sources of negative conductance which is a main factor in Gigahertz/ terahertz communication technology 14,18,19 .…”

Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

“…As the metal work functions of the gold and carbon are 5.34 eV and 5.1 eV, respectively, and the BN is of p-type (as determined by the hot probe technique) with barrier height of 9.64 eV [9], the Au/BN represent a Schottky diode and the C/BN represent another Schottky diode. The presentation of both Schottky-type metals on the front and rare part of the BN makes the Au/BN/C device structure represent a metalsemiconductor-metal (MSM) back-to-back Schottky device.…”

“…The paste, which was prepared at the Alfa Aesar chemical firm (product number 043773) included a typical solution of BN nanopowders (50%) solved in 40% water and 10% aluminum phosphate (AlPO4). Further details about the properties of this material were previously given [9]. The BN liquid was poured over the gold substrate, shacked gently, and left to dry for 24 hours.…”

Highly efficient hydrogen sensors based on Pd nanoparticles supported on boron nitride coated ZnO nanowires

“…First of all, it is reasonable to consider the roles of BN and Pd on the sensing behavior of ZnO NWs. In BN coated ZnO as shown in Figure 8a, since a thin (5±2 nm) BN film is coated around the ZnO NWs, due to the work function difference between ZnO and BN, 84,85 in intimate contact between ZnO and BN electrons from ZnO are transferred to BN and Schottcky barriers (height of 5.52 eV) will be formed on the interfaces between ZnO and BN (Figure S12a), which can expand the electron depletion layer relative to pristine ZnO NWs. Upon…”