Design and characterization of MECSELs for widely tunable (&gt;25 THz) continuous wave operation

Rajala, Patrik; Tatar-Mathes, Philipp; Phung, Hoy-My; Koskinen, Jesse; Ranta, Sanna; Guina, Mircea; Kahle, Hermann

doi:10.1117/12.2610649

Cited by 2 publications

(3 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The MECSEL (Membrane External Cavity Surface Emitting Laser) [7], [8] further simplifies optically pumped semiconductor lasers with removing the DBR and leaving only a thin gain membrane to support operation wavelength spanning from 600 nm to 1.75 µm [7], [9] using both the GaAs and InP material system. Additionally it addresses the thermal [10] and refractive-indexcontrast limitations, like in InP-based DBRs, which are present in traditional VECSEL configurations [11], and also supports record-wide wavelength tunability [12].…”

Section: Introductionmentioning

confidence: 92%

“…This would suggest the potential for an even broader tuning range of this MECSEL gain chip. A VECSEL operating around 2 µm revealed a tuning range of 5.8 THz [23], whereas the broadest tuning range was achieved with a 1-µm MECSEL and a range of 26.5 THz [12]. However, this 1-µm MECSEL has been specifically optimized for broad tuning by using two different sets of quantum wells and optimizing their location within the standing wave intensity profile.…”

Section: B Wavelength Tuning and Spatial Mode Qualitymentioning

confidence: 99%

See 1 more Smart Citation

2-μm 1.5-W Optically Pumped Semiconductor Membrane Laser

Schuchter,

Huwyler,

Golling

et al. 2024

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

We introduce the first diode-pumped GaSb-based semiconductor membrane laser with a continuous wave (cw) output power of 1.5 W at a center wavelength of 2.08 µm with an optical-to-optical efficiency of 11.7 % and thermal resistance of 0.74 K/W. It features a broad tunability over 117 nm, achieved using a 3-mm birefringent quartz crystal in Brewster configuration. This tuning range is currently limited by the dielectric cavity mirrors. The laser beam quality, indicated by an M 2 < 1.45, remains excellent across all output powers. Unlike diodepumped ion-doped solid-state lasers, this semiconductor laser offers full wavelength flexibility through InGaSb quantum well (QW) bandgap engineering in the short-wave-infrared (SWIR) regime. The 1.2-µm thick membrane gain chip with 12 InGaSb QWs is directly bonded on a silicon carbide heatspreader. This type of laser is also referred to as a MECSEL (Membrane External Cavity Surface Emitting Laser) which can support high-power operation in the SWIR regime due to their excellent heat dissipation. We developed new processing techniques to showcase the promising results for MECSEL in the GaSb-based material system.

show abstract

Section: Introductionmentioning

confidence: 92%

Section: B Wavelength Tuning and Spatial Mode Qualitymentioning

confidence: 99%

2-μm 1.5-W Optically Pumped Semiconductor Membrane Laser

Schuchter,

Huwyler,

Golling

et al. 2024

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…On the other hand, when considering a design for the active region that can be tuned across a broad wavelength range, i.e. tens to about 100 nm [18], the resonant condition is fulfilled for a much smaller spectral band. From this standpoint, the main purpose of this study is to investigate the operation of an anti-resonant MECSEL gain structure design, which has an inherent benefit in minimizing reflection at the semiconductor -heat-spreader interfaces for a certain wavelength range, thus potentially being more favorable for mode-locking operation.…”

Section: Introductionmentioning

confidence: 99%

Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

Tatar-Mathes

Phung

Rogers

et al. 2023

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

The operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) employing a gain membrane with a cavity design, which is non-resonant regarding the two semiconductor -heat-spreader interfaces, is presented. The MECSEL delivers watt-level output power, in line with state-of-the-art results. The study provides new evidence that the design criteria of a MECSEL gain region are significantly relaxed compared to active regions employing distributed Bragg reflectors, for which the field distribution is set by the Bragg condition leading to tight tolerances for positioning of the emitting quantum structures. The study has relevance especially for the development of mode-locked MECSELs by minimizing the impact of defective Fabry-Pérot micro-cavity effects due to reflections between the semiconductor gain structure and the two heat-spreader elements placed on each side of the semiconductor membrane.

show abstract

Design and characterization of MECSELs for widely tunable (>25 THz) continuous wave operation

Cited by 2 publications

References 36 publications

2-μm 1.5-W Optically Pumped Semiconductor Membrane Laser

2-μm 1.5-W Optically Pumped Semiconductor Membrane Laser

Effect of Non-Resonant Gain Structure Design in Membrane External-Cavity Surface-Emitting Lasers

Contact Info

Product

Resources

About