Design and Characterization of the CLICTD Pixelated Monolithic Sensor Chip

Kremastiotis, I.; Ballabriga, R.; Campbell, M.; Dannheim, D.; Dort, K.; Egidos, N.; Kröger, Jens; Linssen, L.; Llopart, X.; Münker, Magdalena; Nürnberg, A.; Perić, I.; Spannagel, S.; Vǎnát, T.; Williams, M.C.S.

doi:10.1109/tns.2020.3019887

Cited by 12 publications

(14 citation statements)

References 8 publications

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“…In addition, the sub-pixel segmentation scheme of the front-end has shown to deliver the required accuracy while minimizing the digital footprint. Previous results have shown that the estimated powerconsumption [10] as well as the material budget [14] also comply with the requirements.…”

Section: Discussionsupporting

confidence: 58%

“…In the following, the sensor and readout design are outlined. A detailed description is presented elsewhere [10].…”

Section: The Clictd Monolithic Sensormentioning

confidence: 99%

“…Initial laboratory measurements for the CLICTD sensor can be found elsewhere [10]. In this document, measurements crucial for the calibration and reconstruction of the test-beam data are summarised and partially extended.…”

Section: Laboratory Characterisationmentioning

confidence: 99%

“…• The on-channel NMOS transistors are affected by the negative bias voltage applied to the p-wells. As a consequence, the operation margin of the circuits is reduced leading to a strong non-uniformity and nonlinearity in the ToT response [10].…”

Section: Tot Calibrationmentioning

confidence: 99%

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Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement

Ballabriga,

Buschmann,

Campbell

et al. 2021

Preprint

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The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of 16 × 128 detection channels measuring 300 µm × 30 µm. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a time resolution down to (5.8 ± 0.1) ns and a spatial resolution down to (4.6 ± 0.2) µm are measured. The hit detection efficiency is found to be well above 99.7 % for thresholds of the order of several hundred electrons.

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Section: Discussionsupporting

confidence: 58%

“…In the following, the sensor and readout design are outlined. A detailed description is presented elsewhere [10].…”

Section: The Clictd Monolithic Sensormentioning

confidence: 99%

Section: Laboratory Characterisationmentioning

confidence: 99%

Section: Tot Calibrationmentioning

confidence: 99%

See 2 more Smart Citations

Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement

Ballabriga,

Buschmann,

Campbell

et al. 2021

Preprint

Self Cite

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“…The continuous n-implant design is used for the CLIC Tracker Detector (CLICTD) sensor, a technology demonstrator developed in the context of the tracking detector studies for the Compact Linear Collider (CLIC) [8].…”

Section: Sensor Designmentioning

confidence: 99%

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Ballabriga,

Braach,

Buschmann

et al. 2022

Preprint

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An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. The high simulation statistics enable the inclusion of Landau fluctuations and production of secondary particles, which offers a realistic simulation scenario. The transient simulation approach is an important tool to achieve an accurate time-resolved description of the sensor, which is crucial in the face of novel detector prototypes with increasingly precise timing capabilities. The simulated time resolution as a function of operating parameters as well as the full transient pulse can be monitored and assessed, which offers a new perspective for the optimisation and characterisation of silicon sensors.In this paper, a combination of electrostatic finite-element simulations using 3D TCAD and transient Monte Carlo simulations with the Allpix 2 framework are presented for a monolithic CMOS pixel sensor with a small collection electrode, that is characterised by a highly inhomogeneous, complex electric field. The results are compared to transient 3D TCAD simulations that offer a precise simulation of the transient behaviour but long computation times. Additionally, the simulations are benchmarked against test-beam data and good agreement is found for the performance parameters over a wide range of different operation conditions.

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Transient Monte Carlo simulations for the optimisation and characterisation of monolithic silicon sensors

Ballabriga

Braach

Buschmann

et al. 2022

Nuclear Instruments and Methods in Physics Research Section A:

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Design and Characterization of the CLICTD Pixelated Monolithic Sensor Chip

Cited by 12 publications

References 8 publications

Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement

Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement

Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors

Transient Monte Carlo simulations for the optimisation and characterisation of monolithic silicon sensors

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