Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

Abstract

This research paper proposes the design of an active-loaded differential amplifier using the Double-Gate (DG) MOSFET. This differential amplifier employs feedback and simplifies a previously designed topology by reducing it to a single-ended output instead of a differential one. Other topologies have been referred to determine the benchmark of this design work. The DG MOSFET has been utilized for its high-frequency characteristics, Radio Frequency (RF) applications, and possible advantages in scalability. Electronic device simulation determines the technical feasibility of this differential amplifier using DG MOSFET. The designed differential amplifier exhibits a differential gain of 1.7–1.8 V/V and −3 dB cut-off frequency of 42 MHz. The amplifier can be used in various applications using this methodical design process and the circuital information.