Design and development of an optical system for EUV-microscopy

Foltyn, Thomas; Bergmann, K.; Braun, Stefan; Gawlitza, Peter; Leson, Andreas; Neff, W.; Walter, Konstantin

doi:10.1117/12.559675

Cited by 4 publications

(2 citation statements)

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“…The radiation emitted from the EUV-LAMP is concentrated onto the sample by a condenser. The transmitted radiation is magnified by a factor of 21 with a Schwarzschild [28]. The collector which is jointly developed by the Fraunhofer Institutes IOF, IWS and ILT is an ellipsoidal ring element of NA = 0.16, and has focal radii of f 1 = 885 mm and f 2 =200 mm respectively.…”

Section: Euv-microscopymentioning

confidence: 99%

Progress on EUV-source development, tool integration and applications

Lebert¹,

Jagle²,

Wies³

et al. 2005

SPIE Proceedings

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In EUV lithography, extreme ultraviolet radiation of 13.5 nm wavelength is used to print feature with resolutions consistent with the requirements of the 45 nm technology node or below. EUV is produced by heating xenon, tin, or other elements to a plasma state, using either magnetic compression or laser irradiation. The key concerns -identified at the third EUV-Symposium -are the ability to supply defect-free masks and to increase source component lifetimes to meet the wafer throughput requirements for high volume manufacturing.Source availability and performance -however -made steady progress within the last years on two lines of actions: High power sources for high volume production and medium and low power sources for allowing in-house metrology and performance studies on EUV-mask-blanks, EUV-Masks, photoresists and optical elements.For "volume production sources" 50 W of collected EUV powers are already available by various suppliers. Compact discharge sources of medium power in the range of 10-100 mW / sr / 2% bandwidth and low power EUV-tubes of lowest cost of ownership and superior stability are ideal for peripheral metrology on components for EUV-Lithography. These low power sources supplement beamlines at storage rings by transferring EUV-applications to individual R&D labs.Proceeding integration of those EUV sources into tools for technology development like open frame and microexposers, and in tools for actinic metrology is the best proof of the progress. As of today, the first EUV sources and measurement equipment are available to be used for EUV system, mask, optics and component as well as lithography process development. With the commercial availability of EUV-plasma sources other applications using short wavelength, XUV-radiation will be feasible in a laboratory environment. Some examples of XUV applications are discussed.

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Section: Euv-microscopymentioning

confidence: 99%

Progress on EUV-source development, tool integration and applications

Lebert¹,

Jagle²,

Wies³

et al. 2005

SPIE Proceedings

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“…The interest in the field has been further boosted by other applications of the short-wavelength region of the electromagnetic spectrum, including EUV microlithography (Schellenberg 2008;Bakshi 2008) and EUV microscopy (Silk 1980;Foltyn et al 2004;Schäfer et al 2006), just to quote a few. The development of multilayer structures (Barbee 1986;Joensen et al 1995;Yamashita et al 1999;Spiller 2003) to enhance the optical reflectivity of mirrors at short wavelengths has also stimulated theoretical and experimental investigations in the field.…”

Section: Introductionmentioning

confidence: 99%

Roughness scattering in X-ray grazing-incidence telescopes

Zocchi¹

2009

A&A

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In the framework of the scalar theory of diffraction, we determine the rms width of the angle spread function degraded by surface roughness in reflective grazing-incidence optics of cylindrical symmetry for X-ray astronomy. Our derivation does not rely on the small roughness approximation, is thus valid for arbitrary roughness values, and takes into full consideration the cylindrical symmetry of the mirrors. The dependence of the rms beam width on both the grazing-incidence angles and the radiation wavelength is studied for both single and double reflection optics, the latter being more relevant to X-ray telescopes. When the small roughness approximation is applicable, we also derive an expression for the angle spread function of the optical system in the presence of roughness scattering that provides the correct expression for the rms beam width.

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Angle spread function degradation by surface roughness in imaging optics

Zocchi

2009

Appl. Opt.

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A formula is derived for the total width of the angle spread function in an imaging optical system, the performance of which is degraded by surface roughness. The derivation is done in the framework of the scalar theory of diffraction, but it does not rely on the small roughness approximation. The contribution of scattering from surface roughness to the total width of the angle spread function is found to depend only on the variance of the roughness slope. It is also shown that the common rule of obtaining the total width of the angle spread function as a square sum of the pure scattering component and the pure specular component is actually incorrect and does not fully account for the contribution of the specular component.

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Design and development of an optical system for EUV-microscopy

Cited by 4 publications

References 0 publications

Progress on EUV-source development, tool integration and applications

Progress on EUV-source development, tool integration and applications

Roughness scattering in X-ray grazing-incidence telescopes

Angle spread function degradation by surface roughness in imaging optics

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