Design and evaluation of UKRI-MPW0: An HV-CMOS prototype for high radiation tolerance

Self Cite

UKRI-MPW0 was developed to further improve the radiation tolerance of HV-CMOS pixel sensors. It implements a novel sensor cross-section that uses backside-only biasing to allow high substrate bias voltages > 600 V. In this contribution, the measured results of irradiated UKRI-MPW0 samples are presented, including their current-to-voltage (I-V) characteristics, depletion depth and pixel performance. The chip is proved to have survived high radiation fluence of 3 × 1015 neq/cm2.

Section: Design Of Ukri-mpw0mentioning

confidence: 99%

“…UKRI-MPW0 is mainly composed of the following parts and more detailed description of the chip design can be found in [5]. I.…”

Section: Design Of Ukri-mpw0mentioning

confidence: 99%

Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance

Zhang,

Hammerich,

Powell

et al. 2024

Self Cite

“…The high current means the breakdown voltage of the sensor is limited by the current which can pass through the ring before thermal runaway occurs as opposed to the breakdown of the pixel itself. Although the n-well ring structure put in place has lead to a high current from the edge of the chip the scheme has achieved a breakdown voltage of ≈−600 V [10].…”

Section: Ukri-mpw0mentioning

confidence: 99%

Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance

Wade

Franks²,

Hammerich³

et al. 2022

Self Cite

This paper presents the edge Transient Current Technique (eTCT) measurements of passive test-structures on the UKRI-MPW0 pixel chip, a 280 µm thick proof-of-concept High Voltage-CMOS (HV-CMOS) device designed and fabricated in the LFoundry 150 nm technology node with a nominal substrate resistivity of 1.9 kΩ cm. Samples were irradiated up to 1 × 1016 1 MeV neq cm−2 with neutrons to observe the change in depletion depth and effective doping concentration with irradiation. A depletion depth of the sensor was found to be ≈50 µm at ≈−400 V at 1 × 1016 1 MeV neq cm−2. A stable damage introduction rate (g c ) was also calculated to be 0.011 ± 0.002 cm−1.

“…High breakdown voltages beyond 600 V have been measured before and after irradiation. UKRI-MPW0 contains two active pixel matrices, one with linear transistors and another one with enclosed layout transistors, aimed at testing the novel sensor cross-section [2]. The chip implements, as well, a shunt voltage regulator to generate the various power supply levels locally on-chip to reduce external circuitry and improve the noise performance.…”

Section: Introductionmentioning

confidence: 99%

Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process

Powell

Hammerich²,

Karim³

et al. 2023

Self Cite

This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit — the rest of the circuit is entirely designed with Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.