Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode

Zhong, Xiang; Wang, Baozhu; Sheng, Kuang

doi:10.1109/ispsd.2016.7520820

Cited by 43 publications

(24 citation statements)

References 6 publications

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“…The first two reported works could not make a functional SJ device [16], [17]. The first functional 4H-SiC SJ was reported by Zhong et al [18], [19] using trench etching and sidewall implantation of p-dopant. However, the fabrication of this 1.35 kV SJ device required six implantations of 40−360 keV energy followed by a high temperature anneal at 200−1400 ⁰C for 30 minutes, for creating a p + liner along the sidewalls of a 6 μm deep trench.…”

Section: Device Practicabilitymentioning

confidence: 99%

“…This temperature was found to be 1350 ⁰C and applies only to the device fabricated in Ref. [18]. A similar trial and error approach is required for fabricating devices with any other VBR.…”

Section: Device Practicabilitymentioning

confidence: 99%

“…The guidelines for the 2-DEG in AlGaN / GaN layers on sapphire substrate [32] are widely used for such bilayers on Si or SiC substrates as well. Thermal cycles at 500−850 o C occur after the ALD of Al2O3 during possible trench filling by CVD deposited insulator [33] in step 7) or silicidation during contact formation [18], [34] in step 8). These cycles can be designed to affect the NI minimally.…”

Section: Device Practicabilitymentioning

confidence: 99%

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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Akshay

Karmalkar

2020

IEEE J. Electron Devices Soc.

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We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g. Al2O3 / SiO2; the inter-layer interface of this insulator has a negative charge-sheet, whose magnitude is easily controlled via the insulator deposition temperature. This charge-sheet depletes the n-pillar. Two potential advantages of this structural modification are brought out. First, it can avoid the problems related to SiC SJ's p-pillar fabrication. Second, it can lower the specific-on resistance, RONSP, below that of SJ by 5−45 %, since SiC technology allows the insulator to be thinner than the p-pillar. The critical field, EC, in SiC is > 10 times higher than that in Si. We give an analytical breakdown voltage, VBR, model, which shows that the VBR sensitivity to charge imbalance due to inevitable process variations is inversely proportional to EC; hence, this sensitivity of CSSJ in SiC is > 10 times lower than that in Si. On the other hand, we give numerical simulations to establish that, in spite of EC differences, the SiC CSSJ inherits the advantage of upto 15% higher VBR compared to SiC SJ, from its Si counterparts. We show how our prior analytical procedure of designing a SJ can be adapted to design a CSSJ having a lower RONSP than the SJ, at a specified VBR in 1-10 kV range and charge imbalance  20 %. Our work should strengthen the motivation for fabricating the CSSJ in SiC.

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Section: Device Practicabilitymentioning

confidence: 99%

Section: Device Practicabilitymentioning

confidence: 99%

Section: Device Practicabilitymentioning

confidence: 99%

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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Akshay

Karmalkar

2020

IEEE J. Electron Devices Soc.

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“…Eqs. (4) and (5) were solved by methods that use the high-order nonoscillatory schemes for Hamilton-Jacobi equations [35].…”

Section: Simulationmentioning

confidence: 99%

Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

Mochizuki

Kosugi

Yonezawa

et al. 2019

IEEE J. Electron Devices Soc.

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Aluminum doping during 4H-SiC chemical-vapor-deposition (CVD) trench filling was numerically modeled toward precise design of high-voltage superjunction devices. As a first-order approximation, growth-rate-and surface-normal-scaling functions were determined based on the reported experimental results. Simulated isoconcentration contours of aluminum were confirmed to qualitatively agree with the reported imaging of doping in SiC by scanning spreading resistance microscopy. Improvement of the proposed models based on additional experiments should contribute to reducing the development time for 4H-SiC superjunction devices fabricated using CVD trench filling. INDEX TERMS Aluminum, power semiconductor devices, silicon compounds, simulation.

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“…In 2014, Ryoji Kosugi et al presented the first experimental demonstration of SiC SJ structure by multi-epitaxial growth, and a BV of 1545 V with a R on,sp of 1.06 m •cm 2 were measured [32]. In 2016, a SiC Schottky diode with partial SJ region processed by two groups of implantations was developed, and a BV of 1350V and a R on,sp of 0.92 m •cm 2 were achieved [33]. In 2017, T. Masuda et al reported that the 0.97 m •cm 2 /820 V SiC SJ V-Groove Trench MOSFET had been fabricated [34].…”

Section: Introductionmentioning

confidence: 99%

An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS

Liu

Wang

et al. 2019

IEEE Access

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The theoretical analysis of breakdown model for a deep trench superjunction (DT-SJ) SiC VDMOS is presented in this paper. The vertical electric field distribution is derived by the electric field decomposition. Then, a fitting dependence of the critical electric field on the doping concentration for the device is obtained, based on which, the model of breakdown voltage is given for the DT-SJ SiC VDMOS. Analytical results are compared with simulative results with the same thicknesses of drift region from 8 µm to 16 µm and the doping concentrations from 4×10 16 cm −3 to 8×10 16 cm −3 . It is numerically demonstrated that the errors between model and simulation are less than 3% when N pillar and P pillar have the same width of 1µm.INDEX TERMS Silicon carbide, electric field, breakdown voltage, model.

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Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode

Cited by 43 publications

References 6 publications

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS

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