Design and experiments of a SiC power MOSFET bidirectional switching power pole

Sayed, Hussain; Zurfi, Ahmed; Zhang, Jing

doi:10.1109/isie.2016.7744933

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…In contemporary applications, SiC MOSFETs have become prevalent in switching devices due to their high operating junction temperature, elevated breakdown voltage, increased power density, higher switching frequency, and reduced switching power loss [7]. An illustrative example is a MOSFET-based bidirectional switching power pole (BSPP), which benefits from SiC MOSFETs through a power trace design that minimizes parasitic inductance and balances transient performance between high-side and low-side power MOSFETs, achieving optimal switching performance.…”

Section: The Advantages Of Mosfet and Its Applicationmentioning

confidence: 99%

Comparative analysis of working principles and applications of MOSFET and HEMT

2024

ACE

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Semiconductor materials are currently one of the most core materials in the worlds high-tech industry, and the research and development of semiconductor materials is related to the improvement of human technological level. This paper presents a comparative study of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and High Electron Mobility Transistors (HEMTs), two pivotal components in electrical engineering, each with unique characteristics and functions. Despite structural similarities, MOSFETs and HEMTs differ significantly in operation and conduction methods. MOSFETs rely on an inversion layer formed at the semiconductor-oxide interface, controlled by gate voltage, for electron conduction. Conversely, HEMTs utilize a two-dimensional electron gas (2DEG) at the interface of materials like Gallium Nitride and Aluminum Gallium Nitride, offering high electron mobility crucial for performance. Both share similar I-V characteristics but differ in performance under various conditions. MOSFETs are cost-effective, ideal for mass production and general applications, while HEMTs excel in stability and performance in extreme conditions, suitable for high-performance needs. This study underscores the importance of selecting the right component based on application-specific requirements, highlighting MOSFETs for cost-efficiency and HEMTs for challenging environments. This article will provide some guidance for the research of MOSFET and HEMT.

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Section: The Advantages Of Mosfet and Its Applicationmentioning

confidence: 99%

Comparative analysis of working principles and applications of MOSFET and HEMT

2024

ACE

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“…on the other hand, compared the SiC Mosfet used on the bidirectional switching circuit built on the PCB, in the experimental and simulation environment, and Sayeed observed that the switching performance was compatible. [7] In order to observe the advantages in switching losses, it is very important to compare the materials available in the market. W.Zhang et.…”

Section: Introductionmentioning

confidence: 99%

The Performance Comparison of the SiC and Si Mosfets Used in the 3-Phase Brushless DC Motor Drives for Electric Vehicles

Çetin

SEVİM

2022

International Journal of Automotive Science and Technology

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This study was carried out to compare the Si and SiC MOSFETs in the market used on motor driver circuits. A motor driver circuit is designed to run the brushless DC motors. Thanks to the semiconductors used in the driver circuit, the motor receives current as desired. While performing this task, the MOSFETs get hot and lose power. This situation changes according to the material structure used inside the MOSFETs. Hence, it is planned to compare Si MOSFETs that have been in the market for a long time and SiC MOSFETs that have been used recently under different loads and different temperatures circumstances. Si and SiC MOSFETs are placed in the motor driver circuit, which has the same structure in the simulation environment. The operation of the motor under no load and on different mechanical loads has been analysed. In these cases, the response of the MOSFETs to temperature changes was also analysed by changing the cooling temperature. As a result of the study, SiC MOSFETs were less heated and less power loss was observed than Si MOSFETs. It has been observed that when the mechanical load is high, the switching speed of Si MOSFETs decreases despite the speed of SiC MOSFETs is not affected. As a result of this study, it has been observed that SiC MOSFETs used in the motor driver circuit work more efficiently than Si MOSFETs for electric vehicles.

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