Design and fabrication of 3.3kV SiC MOSFETs for industrial applications

Rusag, Xing; Vursin, Leonid; Bhalla, Aman; Simon, William; Dries, J. Chris

doi:10.23919/ispsd.2017.7988908

Cited by 12 publications

(9 citation statements)

References 6 publications

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“…Field-Effect Transistors (MOSFETs) in half-bridge power modules are of great interest for industrial and traction applications to improve system efficiency and reduce cost of power conversion systems compared to the state-of-the-art silicon IGBT based technology [4]. Up to now, 3.3 kV SiC MOSFETs are under developments by several research groups [4]- [10]. The reported maximum conduction current is 30 A [9] and the maximum short circuit withstanding time (SCWT) is 10 μs [10].…”

Section: Development Of 33 Kv Sic Metal-oxide-semiconductormentioning

confidence: 99%

“…Up to now, 3.3 kV SiC MOSFETs are under developments by several research groups [4]- [10]. The reported maximum conduction current is 30 A [9] and the maximum short circuit withstanding time (SCWT) is 10 μs [10]. However, in most cases of industrial converters, the SCWT of switches is required around 10 μs in order to survive accidental event, especially in motor drive applications [10], [11].…”

Section: Development Of 33 Kv Sic Metal-oxide-semiconductormentioning

confidence: 99%

“…The reported maximum conduction current is 30 A [9] and the maximum short circuit withstanding time (SCWT) is 10 μs [10]. However, in most cases of industrial converters, the SCWT of switches is required around 10 μs in order to survive accidental event, especially in motor drive applications [10], [11]. Meanwhile, both high conduction current and expected device reliability are essential in traction inverter applications.…”

Section: Development Of 33 Kv Sic Metal-oxide-semiconductormentioning

confidence: 99%

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Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications. In this paper, the effects of Junction Field Effect Transistor (JFET) region width and JFET doping (JD) on conduction and SC capability of the 3.3 kV planar-gate SiC MOSFETs are systematically investigated by experiments and simulations. When the JFET width (WJFET) of device without JD is smaller, the positive temperature coefficient of the special on-resistance (Ron,SP) is larger. The JD is effective to improve the Ron,SP, but excessive electric field in gate oxide induced by JD should be paid more attention. The optimization of WJFET can be used to improve both Ron,SP and short circuit withstanding time (SCWT) at the same time. The drain-source current (Ids) and SCWT of the optimized devices are 50 A and more than 20 μs, respectively, which is state-of-the-art for 3.3 kV SiC MOSFETs.

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Section: Development Of 33 Kv Sic Metal-oxide-semiconductormentioning

confidence: 99%

Section: Development Of 33 Kv Sic Metal-oxide-semiconductormentioning

confidence: 99%

Section: Development Of 33 Kv Sic Metal-oxide-semiconductormentioning

confidence: 99%

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Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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“…and 6 in. [8] indicates that commercial introduction from multiple suppliers may be expected in the next 1-2 years. The horizon for 6.5 kV-and Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications 10 kV-rated modules is longer, and the supercascode structure [9] is a very promising alternative, with large benefits in switching speed, diode recovery, and drive simplification as attractive cost points.…”

Section: Device Technologymentioning

confidence: 99%

Status of SiC Products and Technology

Bhalla¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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The benefits of silicon carbide (SiC) devices for use in power electronics are driven by fundamental material benefits of high breakdown field and thermal conductivity, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point. It takes the confluence of many separate developments to drive largescale adoption, which we will examine in this chapter.

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“…As the demand of breakdown voltage is increased, the resistances of the JFET region and drift region inside a power MOSFET increase rapidly [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 ], causing power dissipation. Therefore, it is necessary to develop a power MOSFET with low resistance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

et al. 2021

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This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (Ron,sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the Ron,sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce Ron,sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. Ron,sp is 25% less than that of the traditional vertical MOSFET.

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Design and fabrication of 3.3kV SiC MOSFETs for industrial applications

Cited by 12 publications

References 6 publications

Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Status of SiC Products and Technology

Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures

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