Design and fabrication of a waveguide photodiode for 1.55-μm band access receivers

Takeuchi, Tetsuya; Nakata, T.; Tachigori, M.; Makita, Kikuo; Taguchi, K.

doi:10.1109/iciprm.1998.712452

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“…The highest responsivity at 1550 nm was 0.91 A/W with a flat-cut fiber and 1.19 A/W with a lensed fiber of which the external quantum efficiency is 95.3%. This may be compared with 95%, the highest value from our extended search reported by Takeuchi and others in 1998 [20]. The bandwidth measurement is shown in Fig.…”

Section: Design and Fabricationsupporting

confidence: 53%

Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

Park¹,

Sim²,

Park³

et al. 2006

ETRI J

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A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of 190°C, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

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Section: Design and Fabricationsupporting

confidence: 53%