Design and Fabrication of Low Phase Noise Oscillator Using $Q$ Enhancement of the SISL Cavity Resonator

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This article presents a low‐phase noise negative resistance oscillator using the dual‐cavity resonator (DCR) based on substrate integrated suspended line (SISL) technology. Two air cavities are stacked without increasing the footprint areas of the oscillator. A coupling hole is introduced to realize weak coupling between the two air cavities. The DCR can enhance the roll‐off of the equivalent resonator. The measured Q factor of the DCR is increased by 15% compared with the single cavity resonator. The measured phase noise of the designed oscillator is −135.32 dBc/Hz at 1 MHz offset from the carrier frequency of 12.44 GHz, and the measured FOM at 1 MHz offset is −204 dBc/Hz. Besides, the designed oscillator based on SISL technology has the advantages of low cost, compact size, and self‐packaging properties.

Section: Design Of the Oscillator Using Dcrmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A negative‐resistance oscillator using dual‐cavity based on SISL technology

Han

Yan

2023

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“…Since substrates 2 and 4 are excavated to form an air cavity, the majority of the electromagnetic fields are distributed within it. In addition, to ensure good support, substrate 3 is partly cut off to reduce the dielectric loss in FR‐4 material, which results in a high‐quality factor Q 12 . Via holes are surrounded the air cavity, effectively creating a virtual metal wall, thereby reducing radiation loss.…”

Section: Analysis Of Combline Bpfmentioning

confidence: 99%

“…In addition, to ensure good support, substrate 3 is partly cut off to reduce the dielectric loss in FR-4 material, which results in a high-quality factor Q. 12 Via holes are surrounded the air cavity, effectively creating a virtual metal wall, thereby reducing radiation loss.…”

Section: Analysis Of Combline Bpfmentioning

confidence: 99%

FR‐4‐based Ka‐band SISL bandpass filters using folded half‐wavelength resonators

Yue

Wang

2022

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In this letter, bandpass filters (BPFs) with folded short‐circuited half‐wavelength (λ/2) resonators are proposed based on the substrate integrated suspended line (SISL) platform for satellite communications. Each λ/2 resonator is folded, to achieve an overlapping structure, which not only reduces the size, but more importantly, reduces the loss. In addition, air cavity, metal shielding wall, and substrate excavation method also dramatically reduce the loss in substrates. Note that professional material term (FR‐4) material is chosen for the design, therefore, it is low‐cost and more suitable for production application. Finally, a second‐order and a fourth‐order combline BPFs are fabricated and measured to verify the design method. The insertion loss of the second‐order and the fourth‐order filters are only 0.78 and 1.19 dB at the center frequency of 29.2 GHz, respectively. The presented SISL filters using FR‐4 material demonstrate the advantages of low‐loss, low‐cost, and self‐packaging.

“…2 Substrate integrated suspended line (SISL) 3 not only inherits the merits of low loss and low dispersion of the traditional suspended line 4 but also has the advantages of low cost and self-packaging. A variety of SISL-based circuits, including filter, 5 antenna, 6 amplifier, 7 and oscillator, 8 and so on, have been developed and shown excellent performance.…”

Section: Introductionmentioning

confidence: 99%

An FR4‐based dc to 60 GHz substrate integrated suspended line to suspended coplanar waveguide transition

Wang

et al. 2021

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An FR4-based dc to 60 GHz transition from substrate integrated suspended line (SISL) to suspended coplanar waveguide (SCPW) is proposed in this letter. The design is fabricated using standard multilayer printed circuit boards (PCB) technology, and the substrates used are all low-cost FR4. Since the whole structure is in the suspended form, the bandwidth of the transition has been expanded three times when compared with the state of art. By using SISL with double-metal layer and patterned substrate, the loss of the transition is further reduced, and the conductor loss and dielectric loss have been individually analyzed. The results show that the proposed backto-back transition has an insertion loss of less than 2.7 dB and a return loss of better than 11.4 dB from dc to 60 GHz.