Design and fabrication of VCSELs with Al/sub x/O/sub y/-GaAs DBRs

MacDougal, M.H.; Dapkus, P.D.; Bond, A.E.; Lin, Chenxi; Geske, J.

doi:10.1109/2944.640644

Cited by 66 publications

(20 citation statements)

References 37 publications

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“…The active layer contains three 80 Å In 0.2 Ga 0.8 As QWs, separated by a 100-Å GaAs barrier between the 150 Å separate confinement heterostructure (SCH) barriers. The resonator contains two 1050 Å gradedindex (GRIN) cladding layers with Al content varying from 0.98 (oxide window side [5]) to 0.42 (SCH side), as presented in Table 1. The maximum substrate thickness value that can be used in simulations is 20 mm; this substrate thickness can be received after a partial removal process.…”

Section: Structure Descriptionmentioning

confidence: 99%

Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers

Dyomin

Лысак

Petrov

et al. 2008

Optics and Lasers in Engineering

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Section: Structure Descriptionmentioning

confidence: 99%

Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers

Dyomin

Лысак

Petrov

et al. 2008

Optics and Lasers in Engineering

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“…It is well known that the performance of the semiconductor laser will degrade with the increasing device temperature because of the broadening of the gain spectra, increased nonradiative recombination, and carrier leakage. These heat-induced problems are especially serious in nitride-based VCSELs due to the relatively large thermal resistance in multilayer DBR and the smaller size of current aperture [51], and QCSE-induced electron current leakage [52]. In addition, heat dissipation limited by the poor thermal conductivity of the sapphire substrate significantly affects the device performance.…”

Section: Perspectivesmentioning

confidence: 99%

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Chen

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaNbased VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7• with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 × 10 −2 was measured.Index Terms-Distributed Bragg reflector (DBR), GaN, electrical pumping, superlattice, vertical-cavity surface-emitting laser (VCSEL).

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“…6,7 Toward the realization of a similar building block for III-nitride photonic devices, several groups are attempted to oxidize III-nitride layers. In the case of GaN the oxidation processes are limited to less than 100 nm (dry oxidation) and revealed microcracks on thick oxide layers from the surface.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Current Confinement Aperture Structure by Transforming a Conductive GaN:Si Epitaxial Layer into an Insulating GaOx Layer

Lin

Lee

Shieh

et al. 2014

ACS Appl. Mater. Interfaces

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We report here a simple and robust process to convert embedded conductive GaN epilayers into insulating GaOx and demonstrate its efficacy in vertical current blocking and lateral current steering in a working LED device. The fabrication processes consist of laser scribing, electrochemical (EC) wet-etching, photoelectrochemical (PEC) oxidation, and thermal oxidization of a sacrificial n(+)-GaN:Si layer. The conversion of GaN is made possible through an intermediate stage of porosification where the standard n-type GaN epilayers can be laterally and selectively anodized into a nanoporous (NP) texture while keeping the rest of the layers intact. The fibrous texture of NP GaN with an average wall thickness of less than 100 nm dramatically increases the surface-to-volume ratio and facilitates a rapid oxidation process of GaN into GaOX. The GaOX aperture was formed on the n-side of the LED between the active region and the n-type GaN layer. The wavelength blueshift phenomena of electroluminescence spectra is observed in the treated aperture-emission LED structure (441.5 nm) when compared to nontreated LED structure (443.7 nm) at 0.1 mA. The observation of aperture-confined electroluminescence from an InGaN LED structure suggests that the NP GaN based oxidation will play an enabling role in the design and fabrication of III-nitride photonic devices.

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Design and fabrication of VCSELs with Al/sub x/O/sub y/-GaAs DBRs

Cited by 66 publications

References 37 publications

Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers

Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Fabrication of Current Confinement Aperture Structure by Transforming a Conductive GaN:Si Epitaxial Layer into an Insulating GaOx Layer

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