Error-free communication is crucial for modern electronic devices. Error detection and correction mechanisms are essential to ensure accurate information transmission. With the increasing usage of mobile devices and integrated circuits operating at higher speeds, energy efficiency has become an important design consideration. This study presents carbon nanotube field-effect transistor (CNTFET)-based Hamming Error Detection and Correction circuits and compares them with complementary metal-oxide semiconductor (CMOS)-based counterparts in terms of power efficiency and delay. CNTFETs are more power-efficient and faster than CMOS transistors, making them ideal building blocks for logic circuits. The proposed circuits were simulated using HSPICE. Compared with CMOS circuits, the CNTFET designs consumed less power, had lower delays, and smaller power-delay products. The proposed error detection and correction circuits are suitable for power-efficient and portable systems.