Abstract:Ultra-high-voltage (UHV) junction field-effect transistors (JFETs) embedded separately with the lateral NPN (JFET-LNPN), and the lateral and vertical NPN (JFET-LVNPN), are demonstrated experimentally for improving the electrostatic discharge (ESD) robustness. The ESD characteristics show that both JFET-LNPN and JFET-LVNPN can pass the 5.5-kV human body model (HBM) test. The JFETs embedded with different NPNs have 3.75 times stronger in ESD robustness than the conventional JFET. The failure analysis of the devi… Show more
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