2013
DOI: 10.1155/2013/807542
|View full text |Cite
|
Sign up to set email alerts
|

Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices

Abstract: Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity de… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 16 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?