Design and measurements of n for the multicomponent semiconductor

Abstract

A great deal of research has been performed on refractive index n and extinction coefficient k due to varieties of applications in optical industries. The dispersion equation is described for the photons of varying energies and their interactions with materials since there is a strong correlation of n and k with wavelength. Measurements based on reflectance can be expensive and are very difficult due to compositional variations. We present a low-cost reflectance probe fiber optics designed in-house to determine the absorption coefficients and refractive index of solids. The solutions using a modified Beer-Lamberts Law and merging the concentration and extinction coefficient terms into an absorption coefficient, α, can be given by the equation I = I 0 exp (-α* d) where I is the transmitted intensity, I 0 is incident intensity and d is the thickness. We have experimented with several semiconductor compounds for this study.

All optical approach to determine quality and performance of sensor material

“…We explore the concept that defects will change the refractive index (reflection) which could provide information on the quality of the materials. We have described the details of the basic principle for the reflection and the reflectance measurement [8][9] by shining light on a sample and measuring the light reflected from the sample [10][11][12]. The reflected light consists of specular reflected light and diffuse reflected light, which when combined together is referred to as total reflected light (specular reflected light plus diffuse reflected light).…”