Design and modeling of an efficient high-speed InGaAs/InP QW waveguide-photodetector

Malik, Dharmander; Das, Utpal

doi:10.1007/s11082-023-04619-w

Cited by 2 publications

(6 citation statements)

References 12 publications

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“…The bandwidth maxima was around 30.436 GHz, with this value being within the expected range [ 1 , 9 , 10 , 13 ]. In this case, it was possible to conclude that the maximum bandwidth was higher when the absorption layer percentage was around 20% to 45% percent of the total device length.…”

Section: Influence Of the Structural Dimensions On The Bandwidthmentioning

confidence: 56%

“…On the other hand, the transit time effects are associated with the electron and hole transport in the drift and absorption regions, due to the electric field. Consequently, they are related to the carrier’s drift velocity and the length of both regions [ 1 , 8 , 9 , 10 ].…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand, by increasing the device length, the capacitance will increase. For this reason, the photoconversion of a device is dependent on the device geometry [ 1 , 8 , 9 , 10 ].…”

Section: Methodsmentioning

confidence: 99%

“…The multilayer structure coefficients were obtained by recursively computing the expression set (9). These operations allowed the union of the i-th and the (i+1)-th layer, its coefficients being defined as (i+1,i).…”

Section: Proposed Methodsmentioning

confidence: 99%

“…In the case of semiconductors materials, some material dependencies are commonly studied, such as the variation of their properties with temperature [ 7 ]. InP-In

As photodetectors work at 1300 nm, with tens or hundreds of GHz of bandwidth [ 5 , 8 , 9 , 10 ]. This temperature sensor could be incorporated into common InP photonic integrated circuits, which have a excellent cost–performance relation.…”

Section: Introductionmentioning

confidence: 99%

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Modelling and Design of a Dual Depletion PIN Photodiode as Temperature Sensor

Lameirinhas

Torres

Bernardo

2023

Sensors

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Nowadays, optical systems play an important role in communications. Dual depletion PIN photodiodes are common devices that can operate in different optical bands, depending on the chosen semiconductors. However, since semiconductor properties vary with the surrounding conditions, some optical devices/systems can act as sensors. In this research work, a numerical model is implemented to analyze the frequency response of this kind of structure. It considers both transit time and capacitive effects, and can be applied to compute photodiode frequency response under nonuniform illumination. The InP-In0.53Ga0.47As photodiode is usually used to convert optical into electrical power at wavelengths around 1300 nm (O-band). This model is implemented considering an input frequency variation of up to 100 GHz. The focus of this research work was essentially the determination of the device’s bandwidth from the computed spectra. This was performed at three different temperatures: 275 K, 300 K, and 325 K. The aim of this research work was to analyze if a InP-In0.53Ga0.47As photodiode can act as a temperature sensor, to detect temperature variations. Furthermore, the device dimensions were optimized, to obtain a temperature sensor. The optimized device, for a 6 V applied voltage and an active area of 500 μm2, had a total length of 2.536 μm, in which 53.95% corresponded to the absorption region. In these conditions, if the temperature increases 25 K from the room temperature, one should expect a bandwidth increase of 8.374 GHz, and if it decreases 25 K from that reference, the bandwidth should reduce by 3.620 GHz. This temperature sensor could be incorporated in common InP photonic integrated circuits, which are commonly used in telecommunications.

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Section: Influence Of the Structural Dimensions On The Bandwidthmentioning

confidence: 56%

Section: Methodsmentioning

confidence: 99%

“…On the other hand, by increasing the device length, the capacitance will increase. For this reason, the photoconversion of a device is dependent on the device geometry [ 1 , 8 , 9 , 10 ].…”

Section: Methodsmentioning

confidence: 99%

Section: Proposed Methodsmentioning

confidence: 99%

“…In the case of semiconductors materials, some material dependencies are commonly studied, such as the variation of their properties with temperature [ 7 ]. InP-In

Section: Introductionmentioning

confidence: 99%

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