Design and Modeling of HgCdTe nBn Detectors

Itsuno, Anne M.; Phillips, Jamie; Velicu, S.

doi:10.1007/s11664-011-1614-0

Cited by 70 publications

(39 citation statements)

References 17 publications

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“…Practical application has been demonstrated in InAs, 5,7 InAsSb, 8,9 and InAs/GaSb T2SLs, 10 and recently also in HgCdTe ternary alloy. 11,12 The introduction of unipolar barriers in various designs based on T2SLs drastically changed the architecture of infrared detectors. The term ''unipolar barrier'' was coined to describe a barrier that can block one carrier type (electron or hole) but allows unimpeded flow of the other (Fig.…”

Section: Benefits and Limitations Of Unipolar Barrier Photodetectorsmentioning

confidence: 99%

Mid-Wavelength Infrared nBn for HOT Detectors

Rogalski

Martyniuk

2014

Journal of Elec Materi

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Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.

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Section: Benefits and Limitations Of Unipolar Barrier Photodetectorsmentioning

confidence: 99%

Mid-Wavelength Infrared nBn for HOT Detectors

Rogalski

Martyniuk

2014

Journal of Elec Materi

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“…This type of detector can be implemented in dif− ferent semiconductor materials. Its practical application has been demonstrated in InAs, InAsSb, and InAs/GaSb type−II superlattices (T2SLs) [36] and recently, also in HgCdTe ternary alloy [37]. Introducing of unipolar barriers in various designs based on T2SLs drastically changed the architecture of infrared detectors.…”

Section: Barrier Infrared Detectorsmentioning

confidence: 99%

“…Potential interest in III−V lattice−matched family set (InAs, GaSb, and AlSb) around 6.1 results not only from unique inherited capabilities of the new artificial material with entirely different physical properties in comparison to the constituent layers, but also from the nearly zero band offsets leading to the desirable unipolar band alignments difficult to attain in HgCdTe. Even though, HgCdTe does not exhibit valance zero band offset, it is commonly known that bulk HgCdTe offers high quantum efficiency, therefore recently research groups have attempted to apply unipolar architecture to HgCdTe alloy (n type barrier) which offers technological advantages over p−n HgCdTe homojunction (simplifying the fabrication process) [37,48]. [52].…”

Section: Barrier Infrared Detectorsmentioning

confidence: 99%

HOT infrared photodetectors

Martyniuk

Rogalski

2013

Opto-Electronics Review

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At present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection.Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.

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“…A new strategy to achieve higher operating temperature (HOT) detectors includes the barrier structures (Maimon and Wicks 2006). Itsuno et al presented nBn HgCdTe bulk device being a prospect for circumventing of the p-type doping problems in molecular beam epitaxy (MBE) technology (Itsuno et al 2011). Valence band offset (VBO) between active layer and barrier blocking the minority carrier transport is considered to be the most important issue to overcome.…”

Section: Introductionmentioning

confidence: 99%

nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier

et al. 2016

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Several strategies have been implemented to improve the performance of infrared single pixel detectors at higher operating temperature condition. The most efficient and effective in HgCdTe technology are: non-equilibrium architectures and currently an idea of the barrier detector to include unipolar and complementary structures. Valence band offset between active layer and barrier impeding the minority carrier transport is considered to be the most important issue to overcome. Currently, implementation of the Cd composition and doping graded interfaces has been proposed. In this paper we present the performance (dark current, detectivity, time response) of the nBn detector with HgTe(HgCdTe)/CdTe superlattice barrier. The superlattice barrier is believed to decrease valence band offset between active and barrier layers. Theoretically estimated detectivity of mid-wave (cut-off wavelength, 4.8 lm) detector is *3910 12 cmHz 1/2 /W and time response 150 ps for zero valence band offset, bias 2 V and temperature 155 K.

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Design and Modeling of HgCdTe nBn Detectors

Cited by 70 publications

References 17 publications

Mid-Wavelength Infrared nBn for HOT Detectors

Mid-Wavelength Infrared nBn for HOT Detectors

HOT infrared photodetectors

nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier

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