Design and optimization of a high PSRR CMOS bandgap voltage reference

Tajalli, Armin; Atarodi, M.; Khodaverdi, A.; Esfanjani, F. Sahandi

doi:10.1109/iscas.2004.1328127

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…While there is a drop to less than 10 dB at a frequency of f ≈ 3 MHz for the unfiltered reference voltage, the PSRR for the filtered output voltage is more than 60 dB for all frequencies. This is even slightly higher than the PSRR of a bandgap reference, based on the Kuijk architecture and optimized for high PSRR, which has been presented in [6]. Its PSRR is 59 dB at a frequency of 2 MHz.…”

Section: Simulation Resultsmentioning

confidence: 77%

A trimmable precision bandgap voltage reference on 180 nm CMOS

Timm¹,

Wickmann²

2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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For the operation of a successive approximation register analog-to-digital converter, an integrated reference voltage source is required. This reference has to be stable and has to have high precision. Therefore, trim mechanisms for the achievement of optimal accuracy and minimum temperature drift behavior are necessary.Generally, Kuijk and Brokaw bandgap reference topologies are suitable for these requirements. The Kuijk bandgap reference has typically a very good power supply rejection ratio (PSRR). But adequate noise performance and temperature drift behavior cause relatively high current and area consumption. In contrast to the Kuijk topology, the Brokaw reference circuit has better noise performance and temperature drift at a lower quiescent current. Depending on the topology, the Brokaw reference normally has lower PSRR.For implementation, the Brokaw reference has been chosen. It has a nominal output voltage of 1.25 V with an absolute accuracy of 600 µV after trimming. The temperature drift in the range of -55 • C to 125 • C is typical 22.8 ppm/ • C. The DC power supply rejection ratio (PSRR) is more than 84 dB over all relevant corners. The minimum power supply rejection ratio is 59 dB at approximately 1 MHz. The overall current consumption at ambient temperature is maximal 59 µA.

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Section: Simulation Resultsmentioning

confidence: 77%

A trimmable precision bandgap voltage reference on 180 nm CMOS

Timm¹,

Wickmann²

2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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“…Figure 8 shows the result of a Monte Carlo simulation that can be helpful in determining the main factors affecting the temperature variations of V REF . Figure 8 Table 4 shows that nominal value of V REF is l VREF = 1.2411 V with a standard deviation of r VREF = 9.4 mV [16]. For further reduction in the power dissipation, it is possible to use larger values for g in (15), although it will results in a larger area or more offset gain.…”

Section: Bgr Circuitmentioning

confidence: 99%

An area and power optimization technique for CMOS bandgap voltage references

Tajalli

Chahardori

Khodaverdi

2009

Analog Integr Circ Sig Process

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This article explores the main tradeoffs in design of power and area efficient bandgap voltage reference (BGR) circuits. A structural design methodology for optimizing the silicon area and power dissipation of CMOS BGRs will be introduced. For this purpose, basic equations of the bandgap circuit have been adapted such that can simply be applied in the optimization process. To improve the reliability of the designed circuit, the effect of amplifier offset has been also included in the optimization process. It is also shown that the minimum achievable power consumption and area are highly depending on the fabrication process parameters especially sheet resistivity of the available resistors in the technology and also the area of bipolar transistors. The proposed technique does not depend on a special process and can be applied for designing bandgap reference circuits with different topologies.

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“…Although digital technology has become the development trend of modern electronic products. The original signals generated by most electronic devices, such as electromagnetic records and microphone, are analog [1]. The analog signals must be processed before digital processing.…”

Section: Introductionmentioning

confidence: 99%

Design of a High Performance CMOS Bandgap Voltage Reference

Guang

Huang

2014

AMR

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Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

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Design and optimization of a high PSRR CMOS bandgap voltage reference

Cited by 10 publications

References 11 publications

A trimmable precision bandgap voltage reference on 180 nm CMOS

A trimmable precision bandgap voltage reference on 180 nm CMOS

An area and power optimization technique for CMOS bandgap voltage references

Design of a High Performance CMOS Bandgap Voltage Reference

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