Design and optimization of high efficient GaSb homo-junction solar cell using GaSb intrinsic layer

Maji, Bubai; Chattopadhyay, Rik

doi:10.1007/s00542-020-05125-9

Cited by 4 publications

(2 citation statements)

References 16 publications

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“…The structure consists of n‐InGaP/n‐GaSb/i‐GaSb/ p ‐GaSb layers on Si‐substrate [ 35,36 ] as shown in Figure 10 . We used Si as a substrate at the back of the structure and a window layer made of an InGaP material with a wider bandgap on top of the structure.…”

Section: Resultsmentioning

confidence: 99%

DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector

Bhandari,

Yadav,

Singh

et al. 2023

Physica Status Solidi (b)

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The gallium antimonide (GaSb) material has very attractive electronic and optoelectronic properties which are suitable for next‐generation infrared (IR) photodetector applications. In this work, properties of undoped GaSb material such as density of states, bandstructure, electron density, absorption coefficient, dielectric function, refractive index, and extinction coefficient are calculated using density‐functional theory (DFT). Moreover, the effects of doping with Ge, Sn, and Zn elements on these properties of GaSb material are investigated. It is found that undoped GaSb material exhibits a direct gap of ≈0.72 eV. Among different doping elements, Ge‐doped GaSb produces a very significant enhancement in optical properties. The Ge‐doped GaSb demonstrates a four times higher absorption coefficient in comparison to undoped GaSb in the IR region at 0.8 eV photon energy. GaSb‐based photodetector device is designed using the Solar Cell Capacitance Simulator (SCAPS) 1D tool. The efficiency of the designed photodetector with optimum thicknesses and doping of different layers is found to be improved from 21.34% to 25.91% after incorporating the absorption data set obtained from the DFT calculations. Additionally, the photodetector with optimum parameters demonstrates maximum responsivity of value ≈0.31 A W−1. In the previous findings, it is demonstrated that GaSb is a very suitable material for next‐generation IR photodetector applications.

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Section: Resultsmentioning

confidence: 99%

DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector

Bhandari,

Yadav,

Singh

et al. 2023

Physica Status Solidi (b)

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“…Previous studies have touched upon the theoretical advantages an intrinsic layer might provide, suggesting that its integration could notably enhance the efficiency and performance of the heterojunction solar cell [20,21]. The integration of an intrinsic layer in a PIN structure can improve the efficiency of a solar cell compared to a PN junction [22][23][24][25]. Without the application of an antireflection coating, the perovskite-Si solar cell with a three-terminal heterojunction bipolar transistor design achieves a high efficiency of up to 28.6% [26].…”

Section: Introductionmentioning

confidence: 99%

Maximizing Conversion Efficiency: A Numerical Analysis on P+ a-SiC/i Interface/n-Si Heterojunction Solar Cells with AMPS-1D

Ali,

Hossain,

Hossain

2024

International Journal of Photoenergy

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In this study, a heterojunction (P+ a-SiC/i intrinsic/n-Si) solar cell has been examined and characterized using the Analysis of Microelectronics and Photonic Structures (AMPS-1D) simulator. In this heterojunction solar cell, an intrinsic layer is imposed to enhance the efficiency and performance. The optimum efficiency of 36.52% (Voc=1.714 V, Jsc=27.006 mA/cm2, and FF=0.789) has been achieved with this intrinsic layer. It has also been observed the solar cell without intrinsic layer. In this case, the maximum efficiency of 2.378% has been observed which is very poor. The heterojunction solar cell also has been investigated with electron blocking layer (EBL) and defect layer. In this case, the simulation result shows the lower efficiency (34.357%) than the previous. This research paper introduces an optimized model of a heterojunction solar cell enhanced with an intrinsic layer to improve efficiency. The proposed design shows significant promise in its theoretical framework. Looking forward, the design could be realized in laboratory settings and has the potential to be scaled up for broader applications.

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Numerical simulation of all-inorganic two-terminal AlSb/Al0.15Ga0.85Sb tandem solar cell with high-open circuit voltage (>1.90 V) and >40% conversion efficiency

Hossain,

Jahan,

Hossain

et al. 2023

Solar Energy Materials and Solar Cells

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Design and optimization of high efficient GaSb homo-junction solar cell using GaSb intrinsic layer

Cited by 4 publications

References 16 publications

DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector

DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector

Maximizing Conversion Efficiency: A Numerical Analysis on P+ a-SiC/i Interface/n-Si Heterojunction Solar Cells with AMPS-1D

Numerical simulation of all-inorganic two-terminal AlSb/Al0.15Ga0.85Sb tandem solar cell with high-open circuit voltage (>1.90 V) and >40% conversion efficiency

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