Design and Optimization of Interdigital Capacitor

Beeresha, R S

doi:10.15623/ijret.2016.0533016

Cited by 18 publications

(2 citation statements)

References 7 publications

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“…We designed a quarter wave transformer (QWT) for impedance transition to minimize the impedance mismatches between the microstrip trace line and the 2.92 mm connector (DC -40 GHz). The overall design integrates an interdigital capacitor (IDC) [20], and a radial stub [21] to mitigate parasitic effects arising from the non-ideal behavior of the low-frequency lumped components in the DC biasing network. Design parameters essential for the proposed measurement fixture (see Fig.…”

Section: A Proposed Design Of Measurement Fixturementioning

confidence: 99%

Characterization of Resistance and Inductance of PIN Diode at mmWave Frequency Using 7-Layer Deep Neural Network

Nov,

Chrek,

Chung

2023

IEEE Access

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This paper presents a novel technique for extracting the resistance (R) and inductance (L) of an ultra-low capacitance PIN diode, a critical component in developing 5G mmWave reconfigurable circuits and antennas. In the proposed method, a PIN diode is mounted on a microstrip transmission line and biased by a DC biasing network and its S-parameters are measured. The measured S-parameters are calibrated by the thru-reflect-line calibration to reduce undesirable effects from the measurement fixture. Subsequently, the post-calibration transmission coefficient (S 21 ) is fed into a deep neural network (DNN) which has been trained with simulated S 21 data obtained from a full-wave 3D electromagnetic simulation software. The output of the DNN provides frequency dependent R and L values at the frequency range from 27 GHz to 30 GHz. The results agree well the presumption that R decreases with the increase in bias current and frequency, while L increases as the frequency increases. This result was obtained with a MA4AGP907 p-i-n diode biased with three different forward currents i.e. 1 mA, 5 mA, and 7 mA.

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Section: A Proposed Design Of Measurement Fixturementioning

confidence: 99%

Characterization of Resistance and Inductance of PIN Diode at mmWave Frequency Using 7-Layer Deep Neural Network

Nov,

Chrek,

Chung

2023

IEEE Access

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“…This helps to understand the design and optimization of capacitor parameters. [12]. Siavash Zargari, Saba Falaki, Hadi Veladi in 2016 presented a design for MEMS capacitive pressure sensor.…”

Section: Introduction He Acronym Mems Stands For Micro Electromechanicalmentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Kulkarni,

Chorage

2021

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Numerous technological applications use MEMS capacitive sensing technique as a major component, because of their ease of fabrication process, inexpensive and high sensitivity.The paper aims at modeling interdigitated capacitive (IDC) sensing. Virtually observe the contribution of variations in geometrical parameters to sensor efficiency and optimization factor. The sensor design is verified through ANSYS simulations. Results indicate "an efficient but poorly optimized sensor is better than a well-optimized sensor". It is difficult to detect capacitance in the range of few pF generated using capacitive sensing. How it can be maximized with dimension optimization is focused in this paper.

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