Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage

Ma, Hongming; Wang, Yan

doi:10.1109/icicdt51558.2021.9626399

Cited by 1 publication

(1 citation statement)

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“…This enhanced performance is attributed to the anode-short circuit structure, which allows leakage current from the reverse-biased junction to directly exit through the short-circuited anode. This mechanism also prevents hole injection at the P+ injector region, reducing the common-base current gain of the anode PNP BJT, thereby increasing the forward breakdown voltage [38]. The slightly lower breakdown voltage of the NF-RC-GTO, compared to the con-RC-GTO, is due to the NF structure, which results in a shorter ndrift structure (104 µm).…”

Section: Resultsmentioning

confidence: 99%

Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure

Wu,

Li,

et al. 2024

Electronics

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In this study, a novel integrated 4H-SiC reverse-conducting gate turn-off thyristor (GTO) featuring an N-type floating (NF) structure is proposed. The proposed NF-structured 4H-SiC GTO outperforms conventional reverse-conducting GTOs in forward conduction, effectively eliminating the snapback phenomenon. This is achieved by increasing lateral resistance above the P-injector and modifying the electron current path during early turn-on. NF structures with a doping concentration of 2 × 1014 cm−3 and thicknesses exceeding 4 μm have been indicated to successfully eliminate the snapback phenomenon. Moreover, the anode-shorted structure enhances the GTO’s breakdown voltage and concurrently reduces turn-off losses by 85% at low current densities.

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Section: Resultsmentioning

confidence: 99%