Design and optimization of planar mesa termination for diamond Schottky barrier diodes

Nawawi, Arie; Tseng, King Jet; Rusli, Rusli; Amaratunga, G.A.J.; Umezawa, Hamao; Shikata, Shinichi

doi:10.1016/j.diamond.2013.04.009

Cited by 16 publications

(19 citation statements)

References 25 publications

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“…Diamond SBDs performed with Mo, Ru, Ag, or Zr were investigated. In these studies, an initial stabilization procedure at high temperature was necessary to obtain the thermal stability of SBD electrical properties [5][6][7][8]. People often interpreted the initial stabilization of SBD electrical properties as the consequence of an interlayer oxide or carbide formation [5,8].…”

mentioning

confidence: 97%

Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface

Fiori

Teraji

Koide

2014

Physica Status Solidi (a)

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Rectification abilities of tungsten carbide (WC) Schottky‐barrier diodes fabricated on p‐type diamond were confirmed up to 800 K. In this study, electrical properties were used to support the investigation of the WC/diamond interface reaction under elevated temperature. Before heating above 500 K, the interface was not thermally stable. The interface has been stabilized by mean of an annealing under vacuum in the 550–600 K range. This treatment has produced diodes exhibiting large rectification factors of 106 at 3 V, and low leakage currents of 10−12 amps at 100 V in the blocked state, when the operation temperature was below 600 K. However, rectification factors were gradually worsened, while the temperature was exceeding 600 K.

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mentioning

confidence: 97%

Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface

Fiori

Teraji

Koide

2014

Physica Status Solidi (a)

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“…In the determination of density of interface states charges, we followed method elaborated in [29]. Considering incomplete ionization effect given by (1), (2), and (3) coupled with charge neutrality condition by (6), hole concentration by (7), and electron concentration by (8), we can approximate value of F E and A N  .…”

Section: Resultsmentioning

confidence: 99%

“…Simulation of reverse bias characteristics is in general more challenging because of unclear metal-diamond interface and quality of fabricated diamond crystal. Although several values of diamond impact ionization coefficients have been reported in literature [8,21,22], there is no agreement on accurate values to this date [18]. In our simulation, we did not implement impact ionization model.…”

Section: Device Modelingmentioning

confidence: 99%

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Modeling and simulation of non-ideal characteristics of vertical Mo/diamond Schottky barrier diode based on MIS model

Nawawi

Tseng

Rusli

et al. 2014

Trans. Mat. Res. Soc. Japan

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Modeling and simulation of non-ideal characteristics of a vertical Mo/diamond Schottky barrier diode ( n = 7.677 and Schottky barrier height= 0.8554 at 298 K) were performed in finite element software. Diode's measured forward and reverse bias I V  characteristics at different temperature were presented and analyzed based on Metal-Interfacial layer-Semiconductor (MIS) model with interface states charges to explain the high ideality factor and Fermi level pinning at the Schottky metal-diamond interface. Current transport through the interfacial layer was simulated with Non-local tunneling model with Wentzel-Kramers-Brillouin (WKB) approximation. By combining characterization results and numerous simulations, we determined the values of unknown parameters (related to interfacial layer and energy distribution profile of the interface states charges) to best fit the forward and reverse bias I V T   characteristics simultaneously. Good fittings to the experimental data validate the use of MIS model. The best fitting was obtained with acceptor traps concentration of 1.3x10 13 to 2.7x10 13 eV -1 cm -2 . From reverse bias simulations, it was found that high electric field occurs inside the interfacial layer, especially at the corner of Schottky contact (~11.8 MV/cm). To avoid premature breakdown and realize true potential of diamond material, special attention on the metal-diamond interface must be paid.

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“…In previous papers [18,19] an idea has been proposed to increase the efficiency of the field plate by eliminating the electric field peak in the diamond (Fig. 2 -structure B).…”

Section: New Termination Architecturementioning

confidence: 98%

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Arbess

Isoird

Zerarka

et al. 2015

Diamond and Related Materials

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Using finite element simulations with Sentaurus TCAD (Technology Computer-Aided Design) software, a progress from simple and classic termination for a Schottky diode to new topology termination has been studied in this paper. A polyimide trench under field plate termination has been used. The efficiency increases from 67% for a simple field plate with optimum parameters up to 97%. The maximum electric field in the termination dielectric has been evaluated also. A wide study of the termination geometry has been made in order to extract the optimum parameters in two directions. The first one is to obtain a high efficiency regarding the breakdown voltage, and the second one is to have the minimum electric field peak at the termination edge.

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Design and optimization of planar mesa termination for diamond Schottky barrier diodes

Cited by 16 publications

References 25 publications

Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface

Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface

Modeling and simulation of non-ideal characteristics of vertical Mo/diamond Schottky barrier diode based on MIS model

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

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